Pattern Profile Distortion and Stress Evolution in Nanoporous Qrganosilicates after Photoresist Stripping

Po-Tsun Liu; C. W. Chen; T. C. Chang; Tseung-Yuen Tseng

doi:10.1149/1.1632871

Pattern Profile Distortion and Stress Evolution in Nanoporous Qrganosilicates after Photoresist Stripping

Po-Tsun Liu^*, C. W. Chen, T. C. Chang, Tseung-Yuen Tseng

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

摘要

Pattern profile distortion of nanoporous organosilicates has been investigated after pattern transfer processes. After photoresist stripping with O₂-plasma ashing, many organic function groups are destroyed and sequentially transformed into siloxanol groups (Si-OH) in the nanoporous organosilicates. The interaction between siloxanol groups and the gelation reaction occurred in the internal porous organosilicates predominate stress evolution, leading to the deformation of patterned porous organosilicate films. This physical mechanism responsible for pattern distortion and stress evolution can be consistently confirmed through the residual stress vs. temperature measurement and Fourier transform infrared spectroscopy.

原文	American English
頁（從 - 到）	F5-F7
頁數	3
期刊	Electrochemical and Solid-State Letters
卷	7
發行號	2
DOIs	https://doi.org/10.1149/1.1632871
出版狀態	Published - 8 4月 2004

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abstract = "Pattern profile distortion of nanoporous organosilicates has been investigated after pattern transfer processes. After photoresist stripping with O2-plasma ashing, many organic function groups are destroyed and sequentially transformed into siloxanol groups (Si-OH) in the nanoporous organosilicates. The interaction between siloxanol groups and the gelation reaction occurred in the internal porous organosilicates predominate stress evolution, leading to the deformation of patterned porous organosilicate films. This physical mechanism responsible for pattern distortion and stress evolution can be consistently confirmed through the residual stress vs. temperature measurement and Fourier transform infrared spectroscopy.",

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AU - Liu, Po-Tsun

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AU - Chang, T. C.

AU - Tseng, Tseung-Yuen

PY - 2004/4/8

Y1 - 2004/4/8

N2 - Pattern profile distortion of nanoporous organosilicates has been investigated after pattern transfer processes. After photoresist stripping with O2-plasma ashing, many organic function groups are destroyed and sequentially transformed into siloxanol groups (Si-OH) in the nanoporous organosilicates. The interaction between siloxanol groups and the gelation reaction occurred in the internal porous organosilicates predominate stress evolution, leading to the deformation of patterned porous organosilicate films. This physical mechanism responsible for pattern distortion and stress evolution can be consistently confirmed through the residual stress vs. temperature measurement and Fourier transform infrared spectroscopy.

AB - Pattern profile distortion of nanoporous organosilicates has been investigated after pattern transfer processes. After photoresist stripping with O2-plasma ashing, many organic function groups are destroyed and sequentially transformed into siloxanol groups (Si-OH) in the nanoporous organosilicates. The interaction between siloxanol groups and the gelation reaction occurred in the internal porous organosilicates predominate stress evolution, leading to the deformation of patterned porous organosilicate films. This physical mechanism responsible for pattern distortion and stress evolution can be consistently confirmed through the residual stress vs. temperature measurement and Fourier transform infrared spectroscopy.

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JO - Electrochemical and Solid-State Letters

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ER -

Pattern Profile Distortion and Stress Evolution in Nanoporous Qrganosilicates after Photoresist Stripping

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