Pattern Profile Distortion and Stress Evolution in Nanoporous Qrganosilicates after Photoresist Stripping

Po-Tsun Liu*, C. W. Chen, T. C. Chang, Tseung-Yuen Tseng

*此作品的通信作者

研究成果: Article同行評審

摘要

Pattern profile distortion of nanoporous organosilicates has been investigated after pattern transfer processes. After photoresist stripping with O2-plasma ashing, many organic function groups are destroyed and sequentially transformed into siloxanol groups (Si-OH) in the nanoporous organosilicates. The interaction between siloxanol groups and the gelation reaction occurred in the internal porous organosilicates predominate stress evolution, leading to the deformation of patterned porous organosilicate films. This physical mechanism responsible for pattern distortion and stress evolution can be consistently confirmed through the residual stress vs. temperature measurement and Fourier transform infrared spectroscopy.

原文American English
頁(從 - 到)F5-F7
頁數3
期刊Electrochemical and Solid-State Letters
7
發行號2
DOIs
出版狀態Published - 2004

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