Parallel silicide contacts

I. Ohdomari*, King-Ning Tu

*此作品的通信作者

研究成果: Article同行評審

192 引文 斯高帕斯(Scopus)

摘要

Parallel silicide contacts consisting of PtSi and NiSi with fixed ratios of contact areas were prepared for current-voltage and capacitance-voltage measurements of Schottky barrier height. These measurements were analyzed with models assuming a linear combination of thermionic emission currents or junction capacitances. The measured and the computed values of barrier height have been found to agree very well. A systematic diagnosis of parallel contacts under a variety of conditions is presented in the Appendix.

原文English
頁(從 - 到)3735-3739
頁數5
期刊Journal of Applied Physics
51
發行號7
DOIs
出版狀態Published - 1 12月 1980

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