摘要
Parallel silicide contacts consisting of PtSi and NiSi with fixed ratios of contact areas were prepared for current-voltage and capacitance-voltage measurements of Schottky barrier height. These measurements were analyzed with models assuming a linear combination of thermionic emission currents or junction capacitances. The measured and the computed values of barrier height have been found to agree very well. A systematic diagnosis of parallel contacts under a variety of conditions is presented in the Appendix.
原文 | English |
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頁(從 - 到) | 3735-3739 |
頁數 | 5 |
期刊 | Journal of Applied Physics |
卷 | 51 |
發行號 | 7 |
DOIs | |
出版狀態 | Published - 1 12月 1980 |