Palladium seeding on the tantalum-insulated silicon oxide film by plasma immersion ion implantation for the growth of electroless Copper

J. H. Lin*, Y. Y. Tsai, S. Y. Chiu, T. L. Lee, C. M. Tsai, P. H. Chen, Chien-Cheng Lin, M. S. Feng, C. S. Kou, H. C. Shih

*此作品的通信作者

研究成果: Article同行評審

23 引文 斯高帕斯(Scopus)

摘要

The major aim of this study was to combine the techniques of using plasma immersion ion implantation (PIII) and electroless plating to implant Pd onto a Ta diffusion barrier layer as catalyst for the electroless Cu plating in order to accomplish the ULSI interconnection metallization. In our study, it has been demonstrated that the accelerating Pd + ions by 2 kV pulsed negative bias voltages produce an amorphous Pd layer on β-Ta. The outermost Pd forms an oxide to the chemisorption of oxygen on Pd in air, while innermost Pd does not react with β-Ta, but instead remains in the form of metallic Pd. The Pd doses in the range of 5.7×10 14 and 8.6×10 14 cm -2 invokes an excellent catalytic effect on the electroless Cu plating. This results in an extraordinary ability for filling the submicron holes for gaining high quality electroless plated Cu interconnects, and thus qualifies for the traditional wet activation by SnCl 2 and PdCl 2 solutions.

原文English
頁(從 - 到)592-596
頁數5
期刊Thin Solid Films
377-378
DOIs
出版狀態Published - 1 十二月 2000

指紋

深入研究「Palladium seeding on the tantalum-insulated silicon oxide film by plasma immersion ion implantation for the growth of electroless Copper」主題。共同形成了獨特的指紋。

引用此