P-SiGe nanosheet line tunnel field-effect transistors with ample exploitation of ferroelectric

This work illustrates the ample exploitation of ferroelectric through metal-ferroelectric options for nanosheet line tunnel field-effect transistor (NLTFET), for the first time. Here, SiGe and ferroelectric (HZO) are successfully employed to demonstrate the high performance p-NLTFET through simulations. Owing to this, the on-state current (I on = 122.3 μA μm-1) is enormously improved through the reduction of gate-oxide thickness even at low gate bias. In addition, the steep subthreshold swing is effectively minimized to 25.96 mV dec-1 by controlling the off-state current, gate-leakage and trap-assisted-tunneling. Overall, a 2-order boost on the I on is achieved, compared with planar ferroelectric TFETs.