P-MOSFET gate current and device degradation

Tong Chern Ong; Koichi Seki; Ping K. Ko; Chen-Ming Hu

doi:10.1109/VTSA.1989.68612

P-MOSFET gate current and device degradation

Tong Chern Ong^*, Koichi Seki, Ping K. Ko, Chen-Ming Hu

^*此作品的通信作者

國際半導體產業學院

研究成果: Paper › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Hot-carrier-limited device lifetime of surface-channel p-MOSFETs (p-channel metal-oxide-semiconductor field-effect transistors) is found to correlate well with gate current over a wide range of bias. The same result is not observed for buried-channel p-MOSFETs. A gate current model for surface-channel p-MOSFETs is presented. Using this gate current model, reasonable estimates of AC (pulse) stress lifetime can be made based on DC stress data.

原文	English
頁面	193-196
頁數	4
DOIs	https://doi.org/10.1109/VTSA.1989.68612
出版狀態	Published - 1 十二月 1989
事件	International Symposium on VLSI Technology, Systems and Applications - Proceedings of Technical Papers - Taipei, Taiwan 持續時間: 17 五月 1989 → 19 五月 1989

Conference

Conference	International Symposium on VLSI Technology, Systems and Applications - Proceedings of Technical Papers
城市	Taipei, Taiwan
期間	17/05/89 → 19/05/89

存取文件

10.1109/VTSA.1989.68612

其它文件與鏈接

Link to publication in Scopus

引用此

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title = "P-MOSFET gate current and device degradation",

abstract = "Hot-carrier-limited device lifetime of surface-channel p-MOSFETs (p-channel metal-oxide-semiconductor field-effect transistors) is found to correlate well with gate current over a wide range of bias. The same result is not observed for buried-channel p-MOSFETs. A gate current model for surface-channel p-MOSFETs is presented. Using this gate current model, reasonable estimates of AC (pulse) stress lifetime can be made based on DC stress data.",

author = "Ong, {Tong Chern} and Koichi Seki and Ko, {Ping K.} and Chen-Ming Hu",

year = "1989",

month = dec,

day = "1",

doi = "10.1109/VTSA.1989.68612",

language = "English",

pages = "193--196",

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T1 - P-MOSFET gate current and device degradation

AU - Ong, Tong Chern

AU - Seki, Koichi

AU - Ko, Ping K.

AU - Hu, Chen-Ming

PY - 1989/12/1

Y1 - 1989/12/1

N2 - Hot-carrier-limited device lifetime of surface-channel p-MOSFETs (p-channel metal-oxide-semiconductor field-effect transistors) is found to correlate well with gate current over a wide range of bias. The same result is not observed for buried-channel p-MOSFETs. A gate current model for surface-channel p-MOSFETs is presented. Using this gate current model, reasonable estimates of AC (pulse) stress lifetime can be made based on DC stress data.

AB - Hot-carrier-limited device lifetime of surface-channel p-MOSFETs (p-channel metal-oxide-semiconductor field-effect transistors) is found to correlate well with gate current over a wide range of bias. The same result is not observed for buried-channel p-MOSFETs. A gate current model for surface-channel p-MOSFETs is presented. Using this gate current model, reasonable estimates of AC (pulse) stress lifetime can be made based on DC stress data.

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U2 - 10.1109/VTSA.1989.68612

DO - 10.1109/VTSA.1989.68612

M3 - Paper

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Y2 - 17 May 1989 through 19 May 1989

ER -

P-MOSFET gate current and device degradation

摘要

Conference

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