摘要
Hot-carrier-limited device lifetime of surface-channel p-MOSFETs (p-channel metal-oxide-semiconductor field-effect transistors) is found to correlate well with gate current over a wide range of bias. The same result is not observed for buried-channel p-MOSFETs. A gate current model for surface-channel p-MOSFETs is presented. Using this gate current model, reasonable estimates of AC (pulse) stress lifetime can be made based on DC stress data.
原文 | English |
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頁面 | 193-196 |
頁數 | 4 |
DOIs | |
出版狀態 | Published - 1 12月 1989 |
事件 | International Symposium on VLSI Technology, Systems and Applications - Proceedings of Technical Papers - Taipei, Taiwan 持續時間: 17 5月 1989 → 19 5月 1989 |
Conference
Conference | International Symposium on VLSI Technology, Systems and Applications - Proceedings of Technical Papers |
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城市 | Taipei, Taiwan |
期間 | 17/05/89 → 19/05/89 |