P-MOSFET gate current and device degradation

Tong Chern Ong*, Koichi Seki, Ping K. Ko, Chen-Ming Hu

*此作品的通信作者

研究成果: Paper同行評審

18 引文 斯高帕斯(Scopus)

摘要

Hot-carrier-limited device lifetime of surface-channel p-MOSFETs is found to correlate well with gate current over a wide range of bias. The same result is not observed for buried-channel p-MOSFETs. A gate current model for surface-channel p-MOSFETs is presented. Using this gate current model, reasonable estimates of AC stress lifetime can be made based on DC stress data.

原文English
頁面178-182
頁數5
DOIs
出版狀態Published - 1 12月 1989
事件27th Annual Proceedings: Reliability Physics - 1989 -
持續時間: 11 4月 198911 4月 1989

Conference

Conference27th Annual Proceedings: Reliability Physics - 1989
期間11/04/8911/04/89

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