Hot-carrier-limited device lifetime of surface-channel p-MOSFETs is found to correlate well with gate current over a wide range of bias. The same result is not observed for buried-channel p-MOSFETs. A gate current model for surface-channel p-MOSFETs is presented. Using this gate current model, reasonable estimates of AC stress lifetime can be made based on DC stress data.
|出版狀態||Published - 1 12月 1989|
|事件||27th Annual Proceedings: Reliability Physics - 1989 - |
持續時間: 11 4月 1989 → 11 4月 1989
|Conference||27th Annual Proceedings: Reliability Physics - 1989|
|期間||11/04/89 → 11/04/89|