P-MOSFET gate current and device degradation

Tong Chern Ong; Koichi Seki; Ping K. Ko; Chen-Ming Hu

doi:10.1109/RELPHY.1989.36341

P-MOSFET gate current and device degradation

Tong Chern Ong^*, Koichi Seki, Ping K. Ko, Chen-Ming Hu

^*此作品的通信作者

國際半導體產業學院

研究成果: Paper › 同行評審

18 引文斯高帕斯（Scopus）

摘要

Hot-carrier-limited device lifetime of surface-channel p-MOSFETs is found to correlate well with gate current over a wide range of bias. The same result is not observed for buried-channel p-MOSFETs. A gate current model for surface-channel p-MOSFETs is presented. Using this gate current model, reasonable estimates of AC stress lifetime can be made based on DC stress data.

原文	English
頁面	178-182
頁數	5
DOIs	https://doi.org/10.1109/RELPHY.1989.36341
出版狀態	Published - 1 12月 1989
事件	27th Annual Proceedings: Reliability Physics - 1989 - 持續時間: 11 4月 1989 → 11 4月 1989

Conference

Conference	27th Annual Proceedings: Reliability Physics - 1989
期間	11/04/89 → 11/04/89

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10.1109/RELPHY.1989.36341

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Link to publication in Scopus

引用此

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title = "P-MOSFET gate current and device degradation",

abstract = "Hot-carrier-limited device lifetime of surface-channel p-MOSFETs is found to correlate well with gate current over a wide range of bias. The same result is not observed for buried-channel p-MOSFETs. A gate current model for surface-channel p-MOSFETs is presented. Using this gate current model, reasonable estimates of AC stress lifetime can be made based on DC stress data.",

author = "Ong, {Tong Chern} and Koichi Seki and Ko, {Ping K.} and Chen-Ming Hu",

year = "1989",

month = dec,

day = "1",

doi = "10.1109/RELPHY.1989.36341",

language = "English",

pages = "178--182",

note = "null ; Conference date: 11-04-1989 Through 11-04-1989",

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T1 - P-MOSFET gate current and device degradation

AU - Ong, Tong Chern

AU - Seki, Koichi

AU - Ko, Ping K.

AU - Hu, Chen-Ming

PY - 1989/12/1

Y1 - 1989/12/1

N2 - Hot-carrier-limited device lifetime of surface-channel p-MOSFETs is found to correlate well with gate current over a wide range of bias. The same result is not observed for buried-channel p-MOSFETs. A gate current model for surface-channel p-MOSFETs is presented. Using this gate current model, reasonable estimates of AC stress lifetime can be made based on DC stress data.

AB - Hot-carrier-limited device lifetime of surface-channel p-MOSFETs is found to correlate well with gate current over a wide range of bias. The same result is not observed for buried-channel p-MOSFETs. A gate current model for surface-channel p-MOSFETs is presented. Using this gate current model, reasonable estimates of AC stress lifetime can be made based on DC stress data.

UR - http://www.scopus.com/inward/record.url?scp=0024858746&partnerID=8YFLogxK

U2 - 10.1109/RELPHY.1989.36341

DO - 10.1109/RELPHY.1989.36341

M3 - Paper

AN - SCOPUS:0024858746

SP - 178

EP - 182

Y2 - 11 April 1989 through 11 April 1989

ER -

P-MOSFET gate current and device degradation

摘要

Conference

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