P-channel versus N-channel in MOS-ICs of submicron channel lengths

Luong Mo Dang, Hiroshi Iwai, Yoshio Nishi, Shinji Taguchi

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Measurements of saturated currents made on numerous MOSFETs of decreasing channel lengths, show that their “conducting capability” is dropping sharply due to the effect of carrier velocity saturation and that this tendency is sharper in n-channel devices than in p-channel ones. The tendency is adequately explained using a previously reported one-dimensional model with some refinements. Simulation for the propagation delay time of ring oscillators show that the continuing drop in conducting capability of short channel devices, will eventually lead to a situation where the NMOS and the PMOS will not be distinguishable with each other in terms of speed.

原文English
頁(從 - 到)107-112
頁數6
期刊Japanese Journal of Applied Physics
19
發行號S1
DOIs
出版狀態Published - 1月 1980

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