P-27: Novel AlNiLa serves as gate electrodes of a-TFT for AMLCD

Po-Tsun Liu; Yi Teh Chou; Ting Hao Hsu; An Di Huang; Bing Mau Chen

doi:10.1889/1.3499937

P-27: Novel AlNiLa serves as gate electrodes of a-TFT for AMLCD

Po-Tsun Liu^*, Yi Teh Chou, Ting Hao Hsu, An Di Huang, Bing Mau Chen

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

摘要

AlNiLa metallization technology is introduced for AMLCD as gate electrodes. Ni can effectively prevent Al diffusing into Si-based layer while La can obviously increase uniformity during AlNiLa deposition than that of conventional Al-Nd alloy. According to the electrical measurement results, the compatibility of AlNiLa in TFT has been verified.

原文	English
頁（從 - 到）	1322-1324
頁數	3
期刊	Digest of Technical Papers - SID International Symposium
卷	41
發行號	1
DOIs	https://doi.org/10.1889/1.3499937
出版狀態	Published - 1 12月 2010
事件	48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States 持續時間: 23 5月 2010 → 28 5月 2010

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10.1889/1.3499937

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abstract = "AlNiLa metallization technology is introduced for AMLCD as gate electrodes. Ni can effectively prevent Al diffusing into Si-based layer while La can obviously increase uniformity during AlNiLa deposition than that of conventional Al-Nd alloy. According to the electrical measurement results, the compatibility of AlNiLa in TFT has been verified.",

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AB - AlNiLa metallization technology is introduced for AMLCD as gate electrodes. Ni can effectively prevent Al diffusing into Si-based layer while La can obviously increase uniformity during AlNiLa deposition than that of conventional Al-Nd alloy. According to the electrical measurement results, the compatibility of AlNiLa in TFT has been verified.

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P-27: Novel AlNiLa serves as gate electrodes of a-TFT for AMLCD

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