Integration of surface state and geometry effects on high performance amorphous IGZO thin-film transistors

Li Wei Liu*, Yun Chu Tsai, Po-Tsun Liu, Han Ping D Shieh

*此作品的通信作者

研究成果: Article同行評審

摘要

The influence of surface state effects of a-IGZO TFTs is investigated and modeled by adopting two different structures. The inverted-staggered TFTs with the less surface state effects show both improved sub-threshold swing and stable performances compared to inverted-coplanar TFTs. Based on our result, the inverted-staggered structure is suitable as high-performance a-IGZO TFTs.

原文English
頁(從 - 到)1162-1165
頁數4
期刊Digest of Technical Papers - SID International Symposium
42
發行號1
DOIs
出版狀態Published - 1 6月 2011
事件49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 - Los Angeles, CA, United States
持續時間: 15 5月 201120 5月 2011

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