A three dimensional embedded optical sensor employs low temperature poly-silicon thin film transistor which used gate metal shielding by itself characteristics was proposed. This system provides sensing disparity characteristics of adopted devices under illumination. It's expected the integration of sensing system onto the panel without extra components sensors.
|頁（從 - 到）||1272-1275|
|期刊||Digest of Technical Papers - SID International Symposium|
|出版狀態||Published - 1 十二月 2010|
|事件||48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States|
持續時間: 23 五月 2010 → 28 五月 2010