P-102: Hysteresis suppression of thin-film transistors with poly (vinyl alcohol) insulator on flexible stainless steel substrate

Tse Hsien Lee; Chen Ting Wu; Pei Yi Kao; Huang-Ming Chen; Jih Fon Huang

doi:10.1889/1.3500129

P-102: Hysteresis suppression of thin-film transistors with poly (vinyl alcohol) insulator on flexible stainless steel substrate

Tse Hsien Lee^*, Chen Ting Wu, Pei Yi Kao, Huang-Ming Chen, Jih Fon Huang

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

The Hysteresis effects can be suppressed in flexible thin-film transistors with poly (vinyl alcohol) insulator without crosslinking agent. The characteristic of hysteresis was greatly reduced by SiO₂ nano-particle in PVA solution. The TFTs were fabricated by using a-IGZO as active layer at room temperature. The TFTs exhibited stable performance with field effect mobility (∼10.81 Vs/cm²), high on/off current ratios (∼10⁶), and low threshold voltage (∼-1V) on planarized stainless steel substrate. The transfer curve which measured from various sweep ranges in two different sweep directions suggested that the hysteresis has been successfully suppressed.

原文	English
頁（從 - 到）	1633-1635
頁數	3
期刊	Digest of Technical Papers - SID International Symposium
卷	41 1
DOIs	https://doi.org/10.1889/1.3500129
出版狀態	Published - 1 5月 2010
事件	48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States 持續時間: 23 5月 2010 → 28 5月 2010

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title = "P-102: Hysteresis suppression of thin-film transistors with poly (vinyl alcohol) insulator on flexible stainless steel substrate",

abstract = "The Hysteresis effects can be suppressed in flexible thin-film transistors with poly (vinyl alcohol) insulator without crosslinking agent. The characteristic of hysteresis was greatly reduced by SiO2 nano-particle in PVA solution. The TFTs were fabricated by using a-IGZO as active layer at room temperature. The TFTs exhibited stable performance with field effect mobility (∼10.81 Vs/cm2), high on/off current ratios (∼106), and low threshold voltage (∼-1V) on planarized stainless steel substrate. The transfer curve which measured from various sweep ranges in two different sweep directions suggested that the hysteresis has been successfully suppressed.",

keywords = "Flexible substrate, Hysteresis, In-Ga-Zn oxide (IGZO), Poly (vinyl alcohol), Thin-film transistor (TFT)",

author = "Lee, {Tse Hsien} and Wu, {Chen Ting} and Kao, {Pei Yi} and Huang-Ming Chen and Huang, {Jih Fon}",

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AU - Lee, Tse Hsien

AU - Wu, Chen Ting

AU - Kao, Pei Yi

AU - Chen, Huang-Ming

AU - Huang, Jih Fon

PY - 2010/5/1

Y1 - 2010/5/1

N2 - The Hysteresis effects can be suppressed in flexible thin-film transistors with poly (vinyl alcohol) insulator without crosslinking agent. The characteristic of hysteresis was greatly reduced by SiO2 nano-particle in PVA solution. The TFTs were fabricated by using a-IGZO as active layer at room temperature. The TFTs exhibited stable performance with field effect mobility (∼10.81 Vs/cm2), high on/off current ratios (∼106), and low threshold voltage (∼-1V) on planarized stainless steel substrate. The transfer curve which measured from various sweep ranges in two different sweep directions suggested that the hysteresis has been successfully suppressed.

AB - The Hysteresis effects can be suppressed in flexible thin-film transistors with poly (vinyl alcohol) insulator without crosslinking agent. The characteristic of hysteresis was greatly reduced by SiO2 nano-particle in PVA solution. The TFTs were fabricated by using a-IGZO as active layer at room temperature. The TFTs exhibited stable performance with field effect mobility (∼10.81 Vs/cm2), high on/off current ratios (∼106), and low threshold voltage (∼-1V) on planarized stainless steel substrate. The transfer curve which measured from various sweep ranges in two different sweep directions suggested that the hysteresis has been successfully suppressed.

KW - Flexible substrate

KW - Hysteresis

KW - In-Ga-Zn oxide (IGZO)

KW - Poly (vinyl alcohol)

KW - Thin-film transistor (TFT)

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JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

SN - 0097-966X

Y2 - 23 May 2010 through 28 May 2010

ER -

P-102: Hysteresis suppression of thin-film transistors with poly (vinyl alcohol) insulator on flexible stainless steel substrate

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