P-102: Hysteresis suppression of thin-film transistors with poly (vinyl alcohol) insulator on flexible stainless steel substrate

Tse Hsien Lee*, Chen Ting Wu, Pei Yi Kao, Huang-Ming Chen, Jih Fon Huang

*此作品的通信作者

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

The Hysteresis effects can be suppressed in flexible thin-film transistors with poly (vinyl alcohol) insulator without crosslinking agent. The characteristic of hysteresis was greatly reduced by SiO2 nano-particle in PVA solution. The TFTs were fabricated by using a-IGZO as active layer at room temperature. The TFTs exhibited stable performance with field effect mobility (∼10.81 Vs/cm2), high on/off current ratios (∼106), and low threshold voltage (∼-1V) on planarized stainless steel substrate. The transfer curve which measured from various sweep ranges in two different sweep directions suggested that the hysteresis has been successfully suppressed.

原文English
頁(從 - 到)1633-1635
頁數3
期刊Digest of Technical Papers - SID International Symposium
41 1
DOIs
出版狀態Published - 1 5月 2010
事件48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States
持續時間: 23 5月 201028 5月 2010

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