The Hysteresis effects can be suppressed in flexible thin-film transistors with poly (vinyl alcohol) insulator without crosslinking agent. The characteristic of hysteresis was greatly reduced by SiO2 nano-particle in PVA solution. The TFTs were fabricated by using a-IGZO as active layer at room temperature. The TFTs exhibited stable performance with field effect mobility (∼10.81 Vs/cm2), high on/off current ratios (∼106), and low threshold voltage (∼-1V) on planarized stainless steel substrate. The transfer curve which measured from various sweep ranges in two different sweep directions suggested that the hysteresis has been successfully suppressed.
|頁（從 - 到）||1633-1635|
|期刊||Digest of Technical Papers - SID International Symposium|
|出版狀態||Published - 1 5月 2010|
|事件||48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States|
持續時間: 23 5月 2010 → 28 5月 2010