Oxygen Vacancy Transition in HfOx-Based Flexible, Robust, and Synaptic Bi-Layer Memristor for Neuromorphic and Wearable Applications

Aftab Saleem*, Dayanand Kumar, Amit Singh, Sailesh Rajasekaran, Tseung Yuen Tseng

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

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Engineering & Materials Science

Chemical Compounds