Oxygen-dependent instability and annealing/passivation effects in amorphous In-Ga-Zn-O thin-film transistors

Wei Tsung Chen; Shih Yi Lo; Shih Chin Kao; Hsiao-Wen Zan; Chuang Chuang Tsai; Jian Hong Lin; Chun Hsiang Fang; Chung Chun Lee

doi:10.1109/LED.2011.2165694

Oxygen-dependent instability and annealing/passivation effects in amorphous In-Ga-Zn-O thin-film transistors

Wei Tsung Chen^*, Shih Yi Lo, Shih Chin Kao, Hsiao-Wen Zan, Chuang Chuang Tsai, Jian Hong Lin, Chun Hsiang Fang, Chung Chun Lee

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

204 引文斯高帕斯（Scopus）

摘要

This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of 95 \times 10} ⁴ and 371times 10 ^-4 respectively, is achieved by annealing and passivation.

原文	English
文章編號	6026903
頁（從 - 到）	1552-1554
頁數	3
期刊	IEEE Electron Device Letters
卷	32
發行號	11
DOIs	https://doi.org/10.1109/LED.2011.2165694
出版狀態	Published - 1 11月 2011

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10.1109/LED.2011.2165694

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title = "Oxygen-dependent instability and annealing/passivation effects in amorphous In-Ga-Zn-O thin-film transistors",

abstract = " This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of 95 \times 10} 4 and 371times 10 -4 respectively, is achieved by annealing and passivation.",

keywords = "Bias stress, IGZO, Stability",

author = "Chen, {Wei Tsung} and Lo, {Shih Yi} and Kao, {Shih Chin} and Hsiao-Wen Zan and Tsai, {Chuang Chuang} and Lin, {Jian Hong} and Fang, {Chun Hsiang} and Lee, {Chung Chun}",

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AU - Chen, Wei Tsung

AU - Lo, Shih Yi

AU - Kao, Shih Chin

AU - Zan, Hsiao-Wen

AU - Tsai, Chuang Chuang

AU - Lin, Jian Hong

AU - Fang, Chun Hsiang

AU - Lee, Chung Chun

PY - 2011/11/1

Y1 - 2011/11/1

N2 - This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of 95 \times 10} 4 and 371times 10 -4 respectively, is achieved by annealing and passivation.

AB - This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of 95 \times 10} 4 and 371times 10 -4 respectively, is achieved by annealing and passivation.

KW - Bias stress

KW - IGZO

KW - Stability

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U2 - 10.1109/LED.2011.2165694

DO - 10.1109/LED.2011.2165694

M3 - Article

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SN - 0741-3106

VL - 32

SP - 1552

EP - 1554

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

M1 - 6026903

ER -

Oxygen-dependent instability and annealing/passivation effects in amorphous In-Ga-Zn-O thin-film transistors

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