Oxygen-dependent instability and annealing/passivation effects in amorphous In-Ga-Zn-O thin-film transistors

Wei Tsung Chen*, Shih Yi Lo, Shih Chin Kao, Hsiao-Wen Zan, Chuang Chuang Tsai, Jian Hong Lin, Chun Hsiang Fang, Chung Chun Lee

*此作品的通信作者

研究成果: Article同行評審

192 引文 斯高帕斯(Scopus)

摘要

This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of 95 \times 10} 4 and 371times 10 -4 respectively, is achieved by annealing and passivation.

原文English
文章編號6026903
頁(從 - 到)1552-1554
頁數3
期刊IEEE Electron Device Letters
32
發行號11
DOIs
出版狀態Published - 1 11月 2011

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