Oxide thickness dependence of plasma charging damage

Horng-Chih Lin*, C. C. Chen, M. F. Wang, S. K. Hsien, Chao-Hsin Chien, T. Y. Huang, C. Y. Chang

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Charging damage induced in oxides with thickness ranging from 8.7 to 2.5 nm is investigated. Results of charge-to-breakdown (Qbd) measurements performed on control devices indicate that the polarity dependence increases with decreasing oxide thickness at both room and elevated temperature (180 °C) conditions. As the oxide thickness is thinned down below 3 nm, the Qbd becomes very sensitive to the stressing current density and temperature. Experimental results show that severe antenna effect would occur during plasma ashing treatment in devices with gate oxides as thin as 2.6 nm. It is concluded that high stressing current level, negative plasma charging, and high process temperature are key factors responsible for the damage.

原文English
頁(從 - 到)357-364
頁數8
期刊Microelectronics Reliability
39
發行號3
DOIs
出版狀態Published - 1 1月 1999

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