Oxide burn-in model

Reza Moazzami*, Chen-Ming Hu

*此作品的通信作者

研究成果: Conference article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A model has previously been proposed for predicting the voltage and temperature dependence of oxide lifetime. It is now extended to incorporate the effects of burn-in voltage, temperature, and time on the subsequent lifetime of the oxide. Based on this model and simple ramp-breakdown measurement, burn-in conditions can be optimized to obtain a low burn-in yield loss while meeting a desired reliability requirement.

原文English
頁(從 - 到)77-78
頁數2
期刊Digest of Technical Papers - Symposium on VLSI Technology
出版狀態Published - 1 12月 1989
事件Ninth Symposium on VLSI Technology 1989 - Digest of Technical Papers - Kyoto, Jpn
持續時間: 22 5月 198925 5月 1989

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