Oxide burn-in model

Reza Moazzami; Chen-Ming Hu

Oxide burn-in model

Reza Moazzami^*, Chen-Ming Hu

^*此作品的通信作者

國際半導體產業學院

研究成果: Conference article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

A model has previously been proposed for predicting the voltage and temperature dependence of oxide lifetime. It is now extended to incorporate the effects of burn-in voltage, temperature, and time on the subsequent lifetime of the oxide. Based on this model and simple ramp-breakdown measurement, burn-in conditions can be optimized to obtain a low burn-in yield loss while meeting a desired reliability requirement.

原文	English
頁（從 - 到）	77-78
頁數	2
期刊	Digest of Technical Papers - Symposium on VLSI Technology
出版狀態	Published - 1 12月 1989
事件	Ninth Symposium on VLSI Technology 1989 - Digest of Technical Papers - Kyoto, Jpn 持續時間: 22 5月 1989 → 25 5月 1989

其它文件與鏈接

Link to publication in Scopus

引用此

@article{bb34226329f44ad7aed6cb242d85cd72,

title = "Oxide burn-in model",

abstract = "A model has previously been proposed for predicting the voltage and temperature dependence of oxide lifetime. It is now extended to incorporate the effects of burn-in voltage, temperature, and time on the subsequent lifetime of the oxide. Based on this model and simple ramp-breakdown measurement, burn-in conditions can be optimized to obtain a low burn-in yield loss while meeting a desired reliability requirement.",

author = "Reza Moazzami and Chen-Ming Hu",

year = "1989",

month = dec,

day = "1",

language = "English",

pages = "77--78",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 22-05-1989 Through 25-05-1989",

}

TY - JOUR

T1 - Oxide burn-in model

AU - Moazzami, Reza

AU - Hu, Chen-Ming

PY - 1989/12/1

Y1 - 1989/12/1

N2 - A model has previously been proposed for predicting the voltage and temperature dependence of oxide lifetime. It is now extended to incorporate the effects of burn-in voltage, temperature, and time on the subsequent lifetime of the oxide. Based on this model and simple ramp-breakdown measurement, burn-in conditions can be optimized to obtain a low burn-in yield loss while meeting a desired reliability requirement.

AB - A model has previously been proposed for predicting the voltage and temperature dependence of oxide lifetime. It is now extended to incorporate the effects of burn-in voltage, temperature, and time on the subsequent lifetime of the oxide. Based on this model and simple ramp-breakdown measurement, burn-in conditions can be optimized to obtain a low burn-in yield loss while meeting a desired reliability requirement.

UR - http://www.scopus.com/inward/record.url?scp=0024933158&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0024933158

SP - 77

EP - 78

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

SN - 0743-1562

Y2 - 22 May 1989 through 25 May 1989

ER -

Oxide burn-in model

摘要

其它文件與鏈接

指紋

引用此