A model has previously been proposed for predicting the voltage and temperature dependence of oxide lifetime. It is now extended to incorporate the effects of burn-in voltage, temperature, and time on the subsequent lifetime of the oxide. Based on this model and simple ramp-breakdown measurement, burn-in conditions can be optimized to obtain a low burn-in yield loss while meeting a desired reliability requirement.
|頁（從 - 到）||77-78|
|期刊||Digest of Technical Papers - Symposium on VLSI Technology|
|出版狀態||Published - 1 12月 1989|
|事件||Ninth Symposium on VLSI Technology 1989 - Digest of Technical Papers - Kyoto, Jpn|
持續時間: 22 5月 1989 → 25 5月 1989