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Overview on ESD protection designs of low-parasitic capacitance for RF ICs in CMOS technologies
Ming-Dou Ker
*
, Chun Yu Lin, Yuan Wen Hsiao
*
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研究成果
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Review article
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引文 斯高帕斯(Scopus)
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Keyphrases
CMOS Technology
100%
Electrostatic Discharge (ESD) Protection
100%
Protection Design
100%
Radio-frequency Integrated Circuit (RF IC)
100%
Low Parasitic Capacitance
100%
RF Circuits
50%
Protection Circuit
37%
On chip
25%
Input-output
25%
Electrostatic Discharge
25%
Nanoscale CMOS
12%
Thin Gate Oxide
12%
RF Performance
12%
Operating Frequency
12%
Parasitic Capacitance
12%
RF Applications
12%
Design Task
12%
Engineering
Radio Frequency
100%
Electrostatic Discharge
100%
Parasitic Capacitance
100%
Integrated Circuit
100%
Nanoscale
10%
Gate Oxide
10%
Operating Frequency
10%
Design Task
10%
Computer Science
Parasitic Capacitance
100%
Protection Design
100%
Integrated Circuit
100%
Input/Output
40%
Operating Frequency
20%
Material Science
Electronic Circuit
100%
Capacitance
100%
Oxide Compound
11%