Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuits

Ming-Dou Ker*, Kuo Chun Hsu

*此作品的通信作者

    研究成果: Article同行評審

    216 引文 斯高帕斯(Scopus)

    摘要

    An overview on the electrostatic discharge (ESD) protection circuits by using the silicon controlled rectifier (SCR)-based devices in CMOS ICs is presented. The history and evolution of SCR device used for on-chip ESD protection is introduced. Moreover, two practical problems (higher switching voltage and transient-induced latchup issue) limiting the use of SCR-based devices in on-chip ESD protection are reported. Some modified device structures and trigger-assist circuit techniques to reduce the switching voltage of SCR-based devices are discussed. The solutions to overcome latchup issue in the SCR-based devices are also discussed to safely apply the SCR-based devices for on-chip ESD protection in CMOS IC products.

    原文English
    頁(從 - 到)235-249
    頁數15
    期刊IEEE Transactions on Device and Materials Reliability
    5
    發行號2
    DOIs
    出版狀態Published - 6月 2005

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