摘要
An overview on the electrostatic discharge (ESD) protection circuits by using the silicon controlled rectifier (SCR)-based devices in CMOS ICs is presented. The history and evolution of SCR device used for on-chip ESD protection is introduced. Moreover, two practical problems (higher switching voltage and transient-induced latchup issue) limiting the use of SCR-based devices in on-chip ESD protection are reported. Some modified device structures and trigger-assist circuit techniques to reduce the switching voltage of SCR-based devices are discussed. The solutions to overcome latchup issue in the SCR-based devices are also discussed to safely apply the SCR-based devices for on-chip ESD protection in CMOS IC products.
原文 | English |
---|---|
頁(從 - 到) | 235-249 |
頁數 | 15 |
期刊 | IEEE Transactions on Device and Materials Reliability |
卷 | 5 |
發行號 | 2 |
DOIs | |
出版狀態 | Published - 6月 2005 |