Output power enhancement of light-emitting diodes with defect passivation layer

Ming Hua Lo*, Po Min Tu, Yuh Jen Cheng, Chao Hsun Wang, Cheng Wei Hung, Shih Chieh Hsu, Hao-Chung Kuo, Hsiao-Wen Zan, Shing Chung Wang, Chun Yen Chang, Che Ming Liu

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

We demonstrate high efficiency blue light emitting diodes with defect passivation layers. The defect passivation layers were formed by defect selective wet etching, SiO2 deposition, and chemical mechanical polishing process. The process does not require photolithography patterning. The threading dislocation density of grown sample was reduced down to ∼4×107 cm-2. The defect passivated epi-wafer is used to grow light emitting diode (LED) and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.

原文English
主出版物標題Gallium Nitride Materials and Devices V
DOIs
出版狀態Published - 2010
事件Gallium Nitride Materials and Devices V - San Francisco, CA, United States
持續時間: 25 1月 201028 1月 2010

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
7602
ISSN(列印)0277-786X

Conference

ConferenceGallium Nitride Materials and Devices V
國家/地區United States
城市San Francisco, CA
期間25/01/1028/01/10

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