We report original method of formation Ga(In)N/AlN quantum dots with low density by ammonia MBE on the (0001)AlN surface by using a decomposition process of Ga(In)N thin layer. Low density of quantum dots have been obtained in the range 107-109 cm-2. Single quantum dots photoluminescence lines corresponding to exciton and biexciton transitions were observed in micro-photoluminescence spectra.
|期刊||Journal of Physics: Conference Series|
|出版狀態||Published - 15 八月 2017|
|事件||33rd International Conference on the Physics of Semiconductors, ICPS 2016 - Beijing, China|
持續時間: 31 七月 2016 → 5 八月 2016