Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy

K. S. Zhuravlev; D. V. Gulyaev; I. A. Aleksandrov; T. V. Malin; V. G. Mansurov; Yu G. Galitsyn; K. A. Konfederatova; Yen Chun Chen; Wen-Hao Chang

doi:10.1088/1742-6596/864/1/012007

Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy

K. S. Zhuravlev, D. V. Gulyaev, I. A. Aleksandrov, T. V. Malin, V. G. Mansurov, Yu G. Galitsyn, K. A. Konfederatova, Yen Chun Chen, Wen-Hao Chang

電子物理學系

研究成果: Conference article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

We report original method of formation Ga(In)N/AlN quantum dots with low density by ammonia MBE on the (0001)AlN surface by using a decomposition process of Ga(In)N thin layer. Low density of quantum dots have been obtained in the range 10⁷-10⁹ cm^-2. Single quantum dots photoluminescence lines corresponding to exciton and biexciton transitions were observed in micro-photoluminescence spectra.

原文	English
文章編號	012007
頁數	5
期刊	Journal of Physics: Conference Series
卷	864
發行號	1
DOIs	https://doi.org/10.1088/1742-6596/864/1/012007
出版狀態	Published - 15 8月 2017
事件	33rd International Conference on the Physics of Semiconductors, ICPS 2016 - Beijing, 中國持續時間: 31 7月 2016 → 5 8月 2016

存取文件

10.1088/1742-6596/864/1/012007

其它文件與鏈接

Link to publication in Scopus

引用此

Zhuravlev, K. S., Gulyaev, D. V., Aleksandrov, I. A., Malin, T. V., Mansurov, V. G., Galitsyn, Y. G., Konfederatova, K. A., Chen, Y. C., & Chang, W.-H. (2017). Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy. Journal of Physics: Conference Series, 864(1), 文章 012007. https://doi.org/10.1088/1742-6596/864/1/012007

@article{0eb91b95e62e4803a43c16e556d08296,

title = "Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy",

abstract = "We report original method of formation Ga(In)N/AlN quantum dots with low density by ammonia MBE on the (0001)AlN surface by using a decomposition process of Ga(In)N thin layer. Low density of quantum dots have been obtained in the range 107-109 cm-2. Single quantum dots photoluminescence lines corresponding to exciton and biexciton transitions were observed in micro-photoluminescence spectra.",

author = "Zhuravlev, {K. S.} and Gulyaev, {D. V.} and Aleksandrov, {I. A.} and Malin, {T. V.} and Mansurov, {V. G.} and Galitsyn, {Yu G.} and Konfederatova, {K. A.} and Chen, {Yen Chun} and Wen-Hao Chang",

year = "2017",

month = aug,

day = "15",

doi = "10.1088/1742-6596/864/1/012007",

language = "English",

volume = "864",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

note = "33rd International Conference on the Physics of Semiconductors, ICPS 2016 ; Conference date: 31-07-2016 Through 05-08-2016",

}

TY - JOUR

T1 - Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy

AU - Zhuravlev, K. S.

AU - Gulyaev, D. V.

AU - Aleksandrov, I. A.

AU - Malin, T. V.

AU - Mansurov, V. G.

AU - Galitsyn, Yu G.

AU - Konfederatova, K. A.

AU - Chen, Yen Chun

AU - Chang, Wen-Hao

PY - 2017/8/15

Y1 - 2017/8/15

N2 - We report original method of formation Ga(In)N/AlN quantum dots with low density by ammonia MBE on the (0001)AlN surface by using a decomposition process of Ga(In)N thin layer. Low density of quantum dots have been obtained in the range 107-109 cm-2. Single quantum dots photoluminescence lines corresponding to exciton and biexciton transitions were observed in micro-photoluminescence spectra.

AB - We report original method of formation Ga(In)N/AlN quantum dots with low density by ammonia MBE on the (0001)AlN surface by using a decomposition process of Ga(In)N thin layer. Low density of quantum dots have been obtained in the range 107-109 cm-2. Single quantum dots photoluminescence lines corresponding to exciton and biexciton transitions were observed in micro-photoluminescence spectra.

UR - http://www.scopus.com/inward/record.url?scp=85028744850&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/864/1/012007

DO - 10.1088/1742-6596/864/1/012007

M3 - Conference article

AN - SCOPUS:85028744850

SN - 1742-6588

VL - 864

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012007

T2 - 33rd International Conference on the Physics of Semiconductors, ICPS 2016

Y2 - 31 July 2016 through 5 August 2016

ER -

Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy

摘要

存取文件

其它文件與鏈接

指紋

引用此