Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy

K. S. Zhuravlev, D. V. Gulyaev, I. A. Aleksandrov, T. V. Malin, V. G. Mansurov, Yu G. Galitsyn, K. A. Konfederatova, Yen Chun Chen, Wen-Hao Chang

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

摘要

We report original method of formation Ga(In)N/AlN quantum dots with low density by ammonia MBE on the (0001)AlN surface by using a decomposition process of Ga(In)N thin layer. Low density of quantum dots have been obtained in the range 107-109 cm-2. Single quantum dots photoluminescence lines corresponding to exciton and biexciton transitions were observed in micro-photoluminescence spectra.

原文English
文章編號012007
頁數5
期刊Journal of Physics: Conference Series
864
發行號1
DOIs
出版狀態Published - 15 八月 2017
事件33rd International Conference on the Physics of Semiconductors, ICPS 2016 - Beijing, China
持續時間: 31 七月 20165 八月 2016

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