Origin of traps and charge transport mechanism in hafnia

D. R. Islamov; V. A. Gritsenko; C. H. Cheng; Albert Chin

doi:10.1063/1.4903169

Origin of traps and charge transport mechanism in hafnia

D. R. Islamov, V. A. Gritsenko, C. H. Cheng, Albert Chin

電子研究所

研究成果: Article › 同行評審

45 引文斯高帕斯（Scopus）

摘要

In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO₂. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25eV in HfO₂ was determined based on the charge transport experiments.

原文	English
文章編號	222901
期刊	Applied Physics Letters
卷	105
發行號	22
DOIs	https://doi.org/10.1063/1.4903169
出版狀態	Published - 1 12月 2014

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AB - In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO2. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25eV in HfO2 was determined based on the charge transport experiments.

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Origin of traps and charge transport mechanism in hafnia

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