摘要
We firstly fabricated the organic thin-film transistors with sputtered-AIN film as the gate insulator. The AIN film was deposited by the RF-ICP (Induced Couple Plasma) sputtering. The demonstrated pentacene based TFTs had on/off current ratio around 4 and mobility around 5×10-4 cm 2/Vs without any surface treatment and pentacene purification. All optimized conditions for this new proposed device were under processing.
原文 | English |
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頁(從 - 到) | 56-58 |
頁數 | 3 |
期刊 | SID Conference Record of the International Display Research Conference |
卷 | 2005 |
出版狀態 | Published - 9月 2005 |
事件 | 25th Internatioanl Display Research Conference, EURODISPLAY 2005 - Edinburgh, SCO, 英國 持續時間: 20 9月 2005 → 22 9月 2005 |