Organic thin-film transistors with AIN film as a gate-insulator by RFIICP sputtering

Kuo Hsi Yen; Hsiao-Wen Zan; Chueh Ping Ko; Pu Kuan Liu; Tzu Yueh Chang; Kuo Hai Su; Chiung Sheng Wei; Po-Tsung Lee; Chien Hsun Chen; Chun Ming Yeh; Jennchang Hwang

Organic thin-film transistors with AIN film as a gate-insulator by RFIICP sputtering

Kuo Hsi Yen^*, Hsiao-Wen Zan, Chueh Ping Ko, Pu Kuan Liu, Tzu Yueh Chang, Kuo Hai Su, Chiung Sheng Wei, Po-Tsung Lee, Chien Hsun Chen, Chun Ming Yeh, Jennchang Hwang

^*此作品的通信作者

光電工程學系

研究成果: Paper › 同行評審

1 引文斯高帕斯（Scopus）

摘要

We firstly fabricated the organic thin-film transistors with sputtered-AIN film as the gate insulator. The AlN film was deposited by the RF-ICP (Induced Couple Plasma) sputtering. The demonstrated pentacene based TFTs had on/off current ratio around 4 and mobility around 5×10^-4 cm ²/Vs without any surface treatment and pentacene purification. All optimized conditions for this new proposed device were under processing.

原文	English
頁面	56-58
頁數	3
出版狀態	Published - 10月 2005
事件	Second Americas Display Engineering and Applications Conference, ADEAC 2005 - Portland, OR, 美國持續時間: 25 10月 2005 → 27 10月 2005

Conference

Conference	Second Americas Display Engineering and Applications Conference, ADEAC 2005
國家/地區	美國
城市	Portland, OR
期間	25/10/05 → 27/10/05

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Link to publication in Scopus

引用此

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title = "Organic thin-film transistors with AIN film as a gate-insulator by RFIICP sputtering",

abstract = "We firstly fabricated the organic thin-film transistors with sputtered-AIN film as the gate insulator. The AlN film was deposited by the RF-ICP (Induced Couple Plasma) sputtering. The demonstrated pentacene based TFTs had on/off current ratio around 4 and mobility around 5×10-4 cm 2/Vs without any surface treatment and pentacene purification. All optimized conditions for this new proposed device were under processing.",

author = "Yen, {Kuo Hsi} and Hsiao-Wen Zan and Ko, {Chueh Ping} and Liu, {Pu Kuan} and Chang, {Tzu Yueh} and Su, {Kuo Hai} and Wei, {Chiung Sheng} and Po-Tsung Lee and Chen, {Chien Hsun} and Yeh, {Chun Ming} and Jennchang Hwang",

year = "2005",

month = oct,

language = "English",

pages = "56--58",

note = "Second Americas Display Engineering and Applications Conference, ADEAC 2005 ; Conference date: 25-10-2005 Through 27-10-2005",

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TY - CONF

T1 - Organic thin-film transistors with AIN film as a gate-insulator by RFIICP sputtering

AU - Yen, Kuo Hsi

AU - Zan, Hsiao-Wen

AU - Ko, Chueh Ping

AU - Liu, Pu Kuan

AU - Chang, Tzu Yueh

AU - Su, Kuo Hai

AU - Wei, Chiung Sheng

AU - Lee, Po-Tsung

AU - Chen, Chien Hsun

AU - Yeh, Chun Ming

AU - Hwang, Jennchang

PY - 2005/10

Y1 - 2005/10

N2 - We firstly fabricated the organic thin-film transistors with sputtered-AIN film as the gate insulator. The AlN film was deposited by the RF-ICP (Induced Couple Plasma) sputtering. The demonstrated pentacene based TFTs had on/off current ratio around 4 and mobility around 5×10-4 cm 2/Vs without any surface treatment and pentacene purification. All optimized conditions for this new proposed device were under processing.

AB - We firstly fabricated the organic thin-film transistors with sputtered-AIN film as the gate insulator. The AlN film was deposited by the RF-ICP (Induced Couple Plasma) sputtering. The demonstrated pentacene based TFTs had on/off current ratio around 4 and mobility around 5×10-4 cm 2/Vs without any surface treatment and pentacene purification. All optimized conditions for this new proposed device were under processing.

UR - http://www.scopus.com/inward/record.url?scp=33644746378&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:33644746378

SP - 56

EP - 58

T2 - Second Americas Display Engineering and Applications Conference, ADEAC 2005

Y2 - 25 October 2005 through 27 October 2005

ER -

Organic thin-film transistors with AIN film as a gate-insulator by RFIICP sputtering

摘要

Conference

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