Organic photo transistors with drain bias modulation effect

Hsiao-Wen Zan*, Shih Chin Kao

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

In this paper, the influence of light induced electrons on the threshold voltage shift of organic thin film transistors (OTFTs) was studied. The light induced electrons are formed and accumulated in the channel near the interface of gate dielectric. The light source can he used as second source. Therefore, the study demonstrates the light induced electrons in channel can be affected by drain bias like bias stress. The decreasing accumulated electrons with increasing positive drain bias lower the threshold voltage shift rate during illumination time. The opposite trend can be observed when using negative drain increases accumulated electrons. This result is helpful to adjust the photosensivity of organic photo transistors.

原文English
主出版物標題ECS Transactions - Thin Film Transistors 9, TFT 9
頁面249-252
頁數4
版本9
DOIs
出版狀態Published - 1 12月 2008
事件Thin Film Transistors 9, TFT 9 - 214th ECS Meeting - Honolulu, HI, United States
持續時間: 13 10月 200816 10月 2008

出版系列

名字ECS Transactions
號碼9
16
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

ConferenceThin Film Transistors 9, TFT 9 - 214th ECS Meeting
國家/地區United States
城市Honolulu, HI
期間13/10/0816/10/08

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