Optoelectronic and structural properties of good quality hydrogenated amorphous silicon carbide films deposited by hot wire assisted RF plasma deposition technique

S. Chattopadhyay*, Debabrata Das, A. K. Barua, D. L. Williamson, S. T. Kshirsagar

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

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Keyphrases

Engineering

Material Science

Physics