Optimum Doping Profile of Power MOSFET Epitaxial Layer

Xing Bi Chen, Xing Bi Chen, Chen-Ming Hu

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

The epitaxial layer resistance of a MOSFET can be slightly reduced by using an optimum doping profile, which exhibits a minimum in the upper half of the layer when the layer thickness is large compared to the cell-to-cell spacing. A gradual transition from the n epitaxial layer to the n+ substrate is desirable. When current spreading is significant, the resistance may rise as [Formula omitted] rather than [Formula omitted].

原文English
頁(從 - 到)985-987
頁數3
期刊IEEE Transactions on Electron Devices
29
發行號6
DOIs
出版狀態Published - 1 1月 1982

指紋

深入研究「Optimum Doping Profile of Power MOSFET Epitaxial Layer」主題。共同形成了獨特的指紋。

引用此