Optimum Doping Profile of Power MOSFET Epitaxial Layer

Xing Bi Chen; Xing Bi Chen; Chen-Ming Hu

doi:10.1109/T-ED.1982.20818

Optimum Doping Profile of Power MOSFET Epitaxial Layer

Xing Bi Chen, Xing Bi Chen, Chen-Ming Hu

國際半導體產業學院

研究成果: Article › 同行評審

19 引文斯高帕斯（Scopus）

摘要

The epitaxial layer resistance of a MOSFET can be slightly reduced by using an optimum doping profile, which exhibits a minimum in the upper half of the layer when the layer thickness is large compared to the cell-to-cell spacing. A gradual transition from the n epitaxial layer to the n+ substrate is desirable. When current spreading is significant, the resistance may rise as [Formula omitted] rather than [Formula omitted].

原文	English
頁（從 - 到）	985-987
頁數	3
期刊	IEEE Transactions on Electron Devices
卷	29
發行號	6
DOIs	https://doi.org/10.1109/T-ED.1982.20818
出版狀態	Published - 1 1月 1982

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10.1109/T-ED.1982.20818

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Optimum Doping Profile of Power MOSFET Epitaxial Layer

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