Optimum Doping Profile for Minimum Ohmic Resistance and High-Breakdown Voltage

Chen-Ming Hu

doi:10.1109/T-ED.1979.19416

Optimum Doping Profile for Minimum Ohmic Resistance and High-Breakdown Voltage

Chen-Ming Hu^*

^*此作品的通信作者

國際半導體產業學院

研究成果: Article › 同行評審

105 引文斯高帕斯（Scopus）

摘要

The optimum doping profile of a lightly doped layer that introduces the minimum series resistance and sustains a given junction breakdown voltage is derived. The theory applies to a one-dimensional Schottky diode and qualitatively to the collector or drain doping profiles of transistors. The minimum series resistance is found to be about 3.7 × 10–9 V 2.6B Ω • cm2for an n silicon layer. The optimum doping profile can be closely approximated by a conventional uniformly doped n-n+ structure.

原文	English
頁（從 - 到）	243-244
頁數	2
期刊	IEEE Transactions on Electron Devices
卷	26
發行號	3
DOIs	https://doi.org/10.1109/T-ED.1979.19416
出版狀態	Published - 1 1月 1979

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10.1109/T-ED.1979.19416

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@article{1f7dd636ece649d2a5181a1bbaa67ac9,

title = "Optimum Doping Profile for Minimum Ohmic Resistance and High-Breakdown Voltage",

abstract = "The optimum doping profile of a lightly doped layer that introduces the minimum series resistance and sustains a given junction breakdown voltage is derived. The theory applies to a one-dimensional Schottky diode and qualitatively to the collector or drain doping profiles of transistors. The minimum series resistance is found to be about 3.7 × 10–9 V 2.6B Ω • cm2for an n silicon layer. The optimum doping profile can be closely approximated by a conventional uniformly doped n-n+ structure.",

author = "Chen-Ming Hu",

year = "1979",

month = jan,

day = "1",

doi = "10.1109/T-ED.1979.19416",

language = "English",

volume = "26",

pages = "243--244",

journal = "Ieee Transactions On Electron Devices",

issn = "0018-9383",

publisher = "IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC",

number = "3",

}

TY - JOUR

T1 - Optimum Doping Profile for Minimum Ohmic Resistance and High-Breakdown Voltage

AU - Hu, Chen-Ming

PY - 1979/1/1

Y1 - 1979/1/1

N2 - The optimum doping profile of a lightly doped layer that introduces the minimum series resistance and sustains a given junction breakdown voltage is derived. The theory applies to a one-dimensional Schottky diode and qualitatively to the collector or drain doping profiles of transistors. The minimum series resistance is found to be about 3.7 × 10–9 V 2.6B Ω • cm2for an n silicon layer. The optimum doping profile can be closely approximated by a conventional uniformly doped n-n+ structure.

AB - The optimum doping profile of a lightly doped layer that introduces the minimum series resistance and sustains a given junction breakdown voltage is derived. The theory applies to a one-dimensional Schottky diode and qualitatively to the collector or drain doping profiles of transistors. The minimum series resistance is found to be about 3.7 × 10–9 V 2.6B Ω • cm2for an n silicon layer. The optimum doping profile can be closely approximated by a conventional uniformly doped n-n+ structure.

UR - http://www.scopus.com/inward/record.url?scp=62749110128&partnerID=8YFLogxK

U2 - 10.1109/T-ED.1979.19416

DO - 10.1109/T-ED.1979.19416

M3 - Article

AN - SCOPUS:62749110128

VL - 26

SP - 243

EP - 244

JO - Ieee Transactions On Electron Devices

JF - Ieee Transactions On Electron Devices

SN - 0018-9383

IS - 3

ER -

Optimum Doping Profile for Minimum Ohmic Resistance and High-Breakdown Voltage

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