Optimum Doping Profile for Minimum Ohmic Resistance and High-Breakdown Voltage

Chen-Ming Hu*

*此作品的通信作者

研究成果: Article同行評審

105 引文 斯高帕斯(Scopus)

摘要

The optimum doping profile of a lightly doped layer that introduces the minimum series resistance and sustains a given junction breakdown voltage is derived. The theory applies to a one-dimensional Schottky diode and qualitatively to the collector or drain doping profiles of transistors. The minimum series resistance is found to be about 3.7 × 10–9 V 2.6B Ω • cm2for an n silicon layer. The optimum doping profile can be closely approximated by a conventional uniformly doped n-n+ structure.

原文English
頁(從 - 到)243-244
頁數2
期刊IEEE Transactions on Electron Devices
26
發行號3
DOIs
出版狀態Published - 1 1月 1979

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