Optimization on SCR device with low capacitance for on-chip ESD protection in UWB RF circuits

Chun Yu Lin*, Ming-Dou Ker

*此作品的通信作者

    研究成果: Conference contribution同行評審

    摘要

    Low capacitance (low-C) design on ESD protection device is a solution to mitigate the radio-frequency (RF) performance degradation caused by electrostatic discharge (ESD) protection device. Silicon-controlled rectifier (SCR) device has been used as an effective on-chip ESD protection device in RF ICs due to the smaller layout area and small parasitic capacitance under the same ESD robustness. In this paper, the modified lateral SCR (MLSCR) realized in waffle layout structure is studied to minimize the parasitic capacitance and the variation of the parasitic capacitance within ultra-wide band (UWB) frequencies. With the minimized parasitic capacitance, the degradation on RF circuit performance due to ESD protection devices can be reduced. The waffle MLSCR with low parasitic capacitance is suitable for on-chip ESD protection in UWB RF ICs. Besides, the turn-on speed of MLSCR with waffle layout structure is verified to be better than that with conventional stripe structure.

    原文English
    主出版物標題2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
    DOIs
    出版狀態Published - 23 9月 2008
    事件2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA - Singapore, Singapore
    持續時間: 7 7月 200811 7月 2008

    出版系列

    名字Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

    Conference

    Conference2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
    國家/地區Singapore
    城市Singapore
    期間7/07/0811/07/08

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