摘要
The diode stackup has been used as on-chip electrostatic discharge (ESD) protection for some applications in which the input/output signal swing is higher than VDD or lower than VSS. A novel ESD protection structure of diode stackup is proposed for effective on-chip ESD protection. Experimental results in 65-nm CMOS process show that the optimization on layout style can improve the ESD robustness, decrease the turn-on resistance, and lessen the parasitic capacitance of the diode stackup.
原文 | English |
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文章編號 | 6763105 |
頁(從 - 到) | 775-777 |
頁數 | 3 |
期刊 | IEEE Transactions on Device and Materials Reliability |
卷 | 14 |
發行號 | 2 |
DOIs | |
出版狀態 | Published - 6月 2014 |