摘要
In this article, we study the highly compressive-strained InGaAs/GaAs quantum wells and the broad-area lasers grown by MOVPE. Several epitaxial parameters were optimized, including the growth temperature, pressure and group V to group III (V/III) ratio. Grown with the optimized epitaxial parameters, the highly strained In0.39Ga0.61As/GaAs lasers could be continuously operated at 1.22 μm and their threshold current density Jth was 140 A/cm2. To the best of our knowledge, the demonstrated InGaAs QW laser has the lowest threshold current per quantum well (Jth/QW) of 46.7 A/cm2. The fitted characteristic temperature (T0) was 146.2 K, indicating the good electron confinement ability. Furthermore, by lowering the growth temperature down to 475 °C and the TBAs/III ratio to 5, the emission wavelength of the In0.42Ga0.58As/GaAs quantum wells was as long as 1245 nm and FWHM was 43 meV.
原文 | English |
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頁(從 - 到) | 3615-3620 |
頁數 | 6 |
期刊 | Journal of Crystal Growth |
卷 | 310 |
發行號 | 15 |
DOIs | |
出版狀態 | Published - 15 7月 2008 |