@inproceedings{251d25dd2f644393898c5705c6b17e2d,
title = "Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD",
abstract = "We studied the effect of group V switching times on the formation of interfacial layers in InGaP/GaAs heterostructures grown by LP-MOCVD using low temperature photoluminescence (PL), double crystal X-ray diffraction (DCXRD) and high resolution transmission electron microscopy (HRTEM). Due to the severe substitution process of P by As, the quality of InGaP-to-GaAs interface was very sensitive to switching times. By optimizing the switching conditions, we were able to minimize the interfacial layers to one monolayer (ML) of In0.5Ga0.5As at the GaAs-to-InGaP interface and 1 ML of In0.65Ga0.15P0.15As0.85 at the InGaP-to-GaAs interface. Heterojunction bipolar transistors (HBTs) grown using this switching scheme showed excellent etch selectivity as well as dc characteristics.",
author = "Q. Yang and Hartmann, {Q. J.} and Curtis, {A. P.} and Chun-Hsiung Lin and Ahmari, {D. A.} and D. Scott and Hao-Chung Kuo and Haydn Chen and Stillman, {G. E.}",
note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 ; Conference date: 08-09-1997 Through 11-09-1997",
year = "1997",
doi = "10.1109/ISCS.1998.711571",
language = "English",
isbn = "0780338839",
series = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "95--98",
editor = "Mike Melloch and Reed, {Mark A.}",
booktitle = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",
address = "美國",
}