Optimization of gate insulator material for GaN MIS-HEMT

Y. C. Lin; T. W. Lin; C. H. Wu; J. N. Yao; H. T. Hsu; W. C. Shih; K. Kakushima; K. Tsutsui; H. Iwai; E. Y. Chang

doi:10.1109/ISPSD.2016.7520791

Optimization of gate insulator material for GaN MIS-HEMT

Y. C. Lin, T. W. Lin, C. H. Wu, J. N. Yao, H. T. Hsu, W. C. Shih, K. Kakushima, K. Tsutsui, H. Iwai, E. Y. Chang

研究成果: Conference contribution › 同行評審

9 引文斯高帕斯（Scopus）

摘要

Metal-insulator-semiconductor (M-I-S) structure has been employed for GaN HEMTs to suppress gate leakage current. In this work, various gate insulator materials including SiO₂, HfO₂, La₂O₃, HfO₂/SiO₂ and La₂O₃/SiO₂ were investigated for GaN MIS-HEMT application. It is found that GaN MIS-HEMT with La₂O₃/SiO₂ composite oxide results in better device performance and reliability as compared to other gate insulator materials.

原文	English
主出版物標題	Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	115-118
頁數	4
ISBN（電子）	9781467387682
DOIs	https://doi.org/10.1109/ISPSD.2016.7520791
出版狀態	Published - 25 7月 2016
事件	28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, 捷克共和國持續時間: 12 6月 2016 → 16 6月 2016

出版系列

名字	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
卷	2016-July
ISSN（列印）	1063-6854

Conference

Conference	28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
國家/地區	捷克共和國
城市	Prague
期間	12/06/16 → 16/06/16

存取文件

10.1109/ISPSD.2016.7520791

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Link to publication in Scopus

引用此

Lin, Y. C., Lin, T. W., Wu, C. H., Yao, J. N., Hsu, H. T., Shih, W. C., Kakushima, K., Tsutsui, K., Iwai, H., & Chang, E. Y. (2016). Optimization of gate insulator material for GaN MIS-HEMT. 於 Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 (頁 115-118). 文章 7520791 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; 卷 2016-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2016.7520791

@inproceedings{75ec4001eb1f443ca7f5941268af2545,

title = "Optimization of gate insulator material for GaN MIS-HEMT",

abstract = "Metal-insulator-semiconductor (M-I-S) structure has been employed for GaN HEMTs to suppress gate leakage current. In this work, various gate insulator materials including SiO2, HfO2, La2O3, HfO2/SiO2 and La2O3/SiO2 were investigated for GaN MIS-HEMT application. It is found that GaN MIS-HEMT with La2O3/SiO2 composite oxide results in better device performance and reliability as compared to other gate insulator materials.",

keywords = "Ga HEMT, HfO, LaO, MIS, SiO, power device",

author = "Lin, {Y. C.} and Lin, {T. W.} and Wu, {C. H.} and Yao, {J. N.} and Hsu, {H. T.} and Shih, {W. C.} and K. Kakushima and K. Tsutsui and H. Iwai and Chang, {E. Y.}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 ; Conference date: 12-06-2016 Through 16-06-2016",

year = "2016",

month = jul,

day = "25",

doi = "10.1109/ISPSD.2016.7520791",

language = "English",

series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "115--118",

booktitle = "Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016",

address = "美國",

}

Lin, YC, Lin, TW, Wu, CH, Yao, JN, Hsu, HT, Shih, WC, Kakushima, K, Tsutsui, K, Iwai, H & Chang, EY 2016, Optimization of gate insulator material for GaN MIS-HEMT. 於 Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016., 7520791, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 卷 2016-July, Institute of Electrical and Electronics Engineers Inc., 頁 115-118, 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016, Prague, 捷克共和國, 12/06/16. https://doi.org/10.1109/ISPSD.2016.7520791

Optimization of gate insulator material for GaN MIS-HEMT. / Lin, Y. C.; Lin, T. W.; Wu, C. H. 等.
Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 115-118 7520791 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; 卷 2016-July).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Optimization of gate insulator material for GaN MIS-HEMT

AU - Lin, Y. C.

AU - Lin, T. W.

AU - Wu, C. H.

AU - Yao, J. N.

AU - Hsu, H. T.

AU - Shih, W. C.

AU - Kakushima, K.

AU - Tsutsui, K.

AU - Iwai, H.

AU - Chang, E. Y.

PY - 2016/7/25

Y1 - 2016/7/25

N2 - Metal-insulator-semiconductor (M-I-S) structure has been employed for GaN HEMTs to suppress gate leakage current. In this work, various gate insulator materials including SiO2, HfO2, La2O3, HfO2/SiO2 and La2O3/SiO2 were investigated for GaN MIS-HEMT application. It is found that GaN MIS-HEMT with La2O3/SiO2 composite oxide results in better device performance and reliability as compared to other gate insulator materials.

AB - Metal-insulator-semiconductor (M-I-S) structure has been employed for GaN HEMTs to suppress gate leakage current. In this work, various gate insulator materials including SiO2, HfO2, La2O3, HfO2/SiO2 and La2O3/SiO2 were investigated for GaN MIS-HEMT application. It is found that GaN MIS-HEMT with La2O3/SiO2 composite oxide results in better device performance and reliability as compared to other gate insulator materials.

KW - Ga HEMT

KW - HfO

KW - LaO

KW - MIS

KW - SiO

KW - power device

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U2 - 10.1109/ISPSD.2016.7520791

DO - 10.1109/ISPSD.2016.7520791

M3 - Conference contribution

AN - SCOPUS:84982143982

T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

SP - 115

EP - 118

BT - Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016

Y2 - 12 June 2016 through 16 June 2016

ER -

Lin YC, Lin TW, Wu CH, Yao JN, Hsu HT, Shih WC 等. Optimization of gate insulator material for GaN MIS-HEMT. 於 Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 115-118. 7520791. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD.2016.7520791

Optimization of gate insulator material for GaN MIS-HEMT

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