In this work, a Schottky Barrier Diode (SBD) with an optimized ladder-shaped hybrid anode (LSHA) is demonstrated. The SBD devices in this work were fabricated on a GaN-on-Si wafer with in situ Si3N4 cap layer. To form the LSHA, a two-step recessed process was implemented. For device optimization, the recess depths of the two recess steps were carefully optimized. Devices with different LSHA recess profiles were fabricated, and their electrical characteristics were evaluated by measuring the forward current, reverse current and breakdown voltage (BV). Optimized device exhibited a low reverse leakage current IR of 5.66 × 10-8 (A/mm), a low turn-on voltage VT of 0.315 V, and a BV over 1000 V. In addition, IR (A/mm) versus VT V of this work and Ron, SP mΩcm2) versus BV V of this work are benchmarked. We demonstrated the lowest IR among the GaN SBDs with VT < 0.4 V and the outstanding performance of Ron, SP (0.88 mΩ · cm2) with a hard BV of over 1000 V (1020 V) using the LSHA-SBD.