Optimization of CDS buffer layer on the performance of copper indium gallium selenide solar cells

  • Ming Yang Hsieh
  • , Shou Yi Kuo
  • , Fang I. Lai
  • , Ming Hsuan Kao
  • , Pei Hsuan Huang
  • , Hsun Wen Wang
  • , Min An Tsai
  • , Hao-Chung Kuo

研究成果: Poster同行評審

摘要

From this research, we report on the performances of Cu(In,Ga) Se 2 (CIGS) thin film solar cells device simulation of the carrier concentration and thickness of CdS buffer layer which were respectively varied from 1012 to 1020 cm-3 and 10 nm to 100 nm, to find out an optimum thickness of around 40-50 nm of high-efficiency CdS buffer layer, the optimum of carrier concentration is found to be 1017 cm-3 revealed the best efficiency of 18.20%.

原文English
頁面1532-1534
頁數3
出版狀態Published - 30 8月 2011
事件Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 - Sydney, 澳大利亞
持續時間: 28 8月 20111 9月 2011

Conference

ConferenceConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
國家/地區澳大利亞
城市Sydney
期間28/08/111/09/11

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