摘要
From this research, we report on the performances of Cu(In,Ga) Se 2 (CIGS) thin film solar cells device simulation of the carrier concentration and thickness of CdS buffer layer which were respectively varied from 1012 to 1020 cm-3 and 10 nm to 100 nm, to find out an optimum thickness of around 40-50 nm of high-efficiency CdS buffer layer, the optimum of carrier concentration is found to be 1017 cm-3 revealed the best efficiency of 18.20%.
原文 | English |
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頁面 | 1532-1534 |
頁數 | 3 |
出版狀態 | Published - 30 8月 2011 |
事件 | Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 - Sydney, 澳大利亞 持續時間: 28 8月 2011 → 1 9月 2011 |
Conference
Conference | Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 |
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國家/地區 | 澳大利亞 |
城市 | Sydney |
期間 | 28/08/11 → 1/09/11 |