From this research, we report on the performances of Cu(In,Ga) Se 2 (CIGS) thin film solar cells device simulation of the carrier concentration and thickness of CdS buffer layer which were respectively varied from 1012 to 1020 cm-3 and 10 nm to 100 nm, to find out an optimum thickness of around 40-50 nm of high-efficiency CdS buffer layer, the optimum of carrier concentration is found to be 1017 cm-3 revealed the best efficiency of 18.20%.
|出版狀態||Published - 30 8月 2011|
|事件||Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 - Sydney, Australia|
持續時間: 28 8月 2011 → 1 9月 2011
|Conference||Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011|
|期間||28/08/11 → 1/09/11|