Optimal inter-gate separation and overlapped source of multi-channel line tunnel FETs

Narasimhulu Thoti; Yi-Ming Li; Sekhar Reddy Kola; Seiji Samukawa

doi:10.1109/OJNANO.2020.2998939

Optimal inter-gate separation and overlapped source of multi-channel line tunnel FETs

Narasimhulu Thoti, Yi-Ming Li^*, Sekhar Reddy Kola, Seiji Samukawa

^*此作品的通信作者

電信工程研究所

研究成果: Article › 同行評審

14 引文斯高帕斯（Scopus）

摘要

This work comprises of design and simulation of multi-channel line tunnel field-effect transistors (mCLTFETs) by scaling inter-gate separation (IGS) and overlapped source (L_OV). The scope of the work is to explore the performance boost and optimization of the studied devices by considering geometrical structures, low-bandgap materials, IGS and L_OV of the mCLTFETs. The structure is designed without diminishing the subthreshold swing (SS) and the leakage currents through a spacer technology and strained Si_0.6Ge_0.4. The optimal values of IGS and L_OV for the multi-channel concept are estimated subject to several physical constraints of the proposed device. An IGS ≈ 10 nm and a L_OV ≈ L_G/2 are reported as suitable choice for sub-8-nm technological nodes, where SS = 18 mV/dec and I_on/I_off = 10⁹ are achieved.

原文	English
文章編號	2998939
頁（從 - 到）	38-46
頁數	9
期刊	IEEE Open Journal of Nanotechnology
卷	1
DOIs	https://doi.org/10.1109/OJNANO.2020.2998939
出版狀態	Published - 2020

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10.1109/OJNANO.2020.2998939

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title = "Optimal inter-gate separation and overlapped source of multi-channel line tunnel FETs",

abstract = "This work comprises of design and simulation of multi-channel line tunnel field-effect transistors (mCLTFETs) by scaling inter-gate separation (IGS) and overlapped source (LOV). The scope of the work is to explore the performance boost and optimization of the studied devices by considering geometrical structures, low-bandgap materials, IGS and LOV of the mCLTFETs. The structure is designed without diminishing the subthreshold swing (SS) and the leakage currents through a spacer technology and strained Si0.6Ge0.4. The optimal values of IGS and LOV for the multi-channel concept are estimated subject to several physical constraints of the proposed device. An IGS ≈ 10 nm and a LOV ≈ LG/2 are reported as suitable choice for sub-8-nm technological nodes, where SS = 18 mV/dec and Ion/Ioff = 109 are achieved.",

keywords = "Device Simulation, Electrical characteristics, Inter-gate separation, Multi-channel line tunnel field effect transistors, Physical quantities, SiGe, Source overlap, Tunneling Models",

author = "Narasimhulu Thoti and Yi-Ming Li and Kola, {Sekhar Reddy} and Seiji Samukawa",

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doi = "10.1109/OJNANO.2020.2998939",

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T1 - Optimal inter-gate separation and overlapped source of multi-channel line tunnel FETs

AU - Thoti, Narasimhulu

AU - Li, Yi-Ming

AU - Kola, Sekhar Reddy

AU - Samukawa, Seiji

N1 - Publisher Copyright: © IEEE 2020.

PY - 2020

Y1 - 2020

N2 - This work comprises of design and simulation of multi-channel line tunnel field-effect transistors (mCLTFETs) by scaling inter-gate separation (IGS) and overlapped source (LOV). The scope of the work is to explore the performance boost and optimization of the studied devices by considering geometrical structures, low-bandgap materials, IGS and LOV of the mCLTFETs. The structure is designed without diminishing the subthreshold swing (SS) and the leakage currents through a spacer technology and strained Si0.6Ge0.4. The optimal values of IGS and LOV for the multi-channel concept are estimated subject to several physical constraints of the proposed device. An IGS ≈ 10 nm and a LOV ≈ LG/2 are reported as suitable choice for sub-8-nm technological nodes, where SS = 18 mV/dec and Ion/Ioff = 109 are achieved.

AB - This work comprises of design and simulation of multi-channel line tunnel field-effect transistors (mCLTFETs) by scaling inter-gate separation (IGS) and overlapped source (LOV). The scope of the work is to explore the performance boost and optimization of the studied devices by considering geometrical structures, low-bandgap materials, IGS and LOV of the mCLTFETs. The structure is designed without diminishing the subthreshold swing (SS) and the leakage currents through a spacer technology and strained Si0.6Ge0.4. The optimal values of IGS and LOV for the multi-channel concept are estimated subject to several physical constraints of the proposed device. An IGS ≈ 10 nm and a LOV ≈ LG/2 are reported as suitable choice for sub-8-nm technological nodes, where SS = 18 mV/dec and Ion/Ioff = 109 are achieved.

KW - Device Simulation

KW - Electrical characteristics

KW - Inter-gate separation

KW - Multi-channel line tunnel field effect transistors

KW - Physical quantities

KW - SiGe

KW - Source overlap

KW - Tunneling Models

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SN - 2644-1292

VL - 1

SP - 38

EP - 46

JO - IEEE Open Journal of Nanotechnology

JF - IEEE Open Journal of Nanotechnology

M1 - 2998939

ER -

Optimal inter-gate separation and overlapped source of multi-channel line tunnel FETs

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