Optimal design of the multiple-apertures-GaN-based vertical HEMTs with SiO₂current blocking layer

Keyphrases

• Gallium Nitride 100%
• Multiple Apertures 100%
• Blocking Layer 100%
• Current Blocking Layer 60%
• Drain Current 40%
• Device Performance 40%
• High Electron Mobility Transistor 40%
• High Power Applications 40%
• Breakdown Voltage 40%
• Two Dimensional 20%
• Electrical Characteristics 20%
• Silicon Dioxide 20%
• Breakdown Characteristics 20%
• High-speed Applications 20%
• Drain Bias 20%
• Material Properties 20%
• Bias Conditions 20%
• Device Simulation 20%
• On-state 20%
• Vertical Structure 20%

Engineering

• Optimal Design 100%
• Nitride 100%
• Breakdown Voltage 40%
• Current Drain 40%
• Device Performance 40%
• Two Dimensional 20%
• Speed Application 20%
• Numerical Study 20%
• Drain Bias 20%
• Silicon Dioxide 20%