Optical simulation and fabrication of nitride-based LEDs with the inverted pyramid sidewalls

C. W. Kuo; Y. C. Lee; Y. K. Fu; C. H. Tsai; M. L. Wu; G. C. Chi; Cheng-Huang Kuo; C. J. Tun

doi:10.1109/JSTQE.2009.2015335

Optical simulation and fabrication of nitride-based LEDs with the inverted pyramid sidewalls

C. W. Kuo, Y. C. Lee, Y. K. Fu, C. H. Tsai, M. L. Wu, G. C. Chi, Cheng-Huang Kuo, C. J. Tun

照明與能源光電研究所

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7 引文斯高帕斯（Scopus）

摘要

In this study, the numerical and experimental demonstrations for the enhancement of light-extraction efficiency in nitride-based LEDs with randomly inverted pyramid sidewalls (IPSs) by chemical etching of the chip edge are presented. With 20 mA injection current, it was found that forward voltages were 3.69 and 3.75 V while output powers were 7.07 and 8.95 mW for the conventional LED and inverted pyramid sidewall LED, respectively. The larger LED output power is attributed to the increased light-extraction efficiency by IPSs.

原文	English
文章編號	5166477
頁（從 - 到）	1264-1268
頁數	5
期刊	IEEE Journal on Selected Topics in Quantum Electronics
卷	15
發行號	4
DOIs	https://doi.org/10.1109/JSTQE.2009.2015335
出版狀態	Published - 22 7月 2009

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10.1109/JSTQE.2009.2015335

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abstract = "In this study, the numerical and experimental demonstrations for the enhancement of light-extraction efficiency in nitride-based LEDs with randomly inverted pyramid sidewalls (IPSs) by chemical etching of the chip edge are presented. With 20 mA injection current, it was found that forward voltages were 3.69 and 3.75 V while output powers were 7.07 and 8.95 mW for the conventional LED and inverted pyramid sidewall LED, respectively. The larger LED output power is attributed to the increased light-extraction efficiency by IPSs.",

keywords = "Inverted pyramid sidewalls (IPSs), LED, Simulation, Wet etching",

author = "Kuo, {C. W.} and Lee, {Y. C.} and Fu, {Y. K.} and Tsai, {C. H.} and Wu, {M. L.} and Chi, {G. C.} and Cheng-Huang Kuo and Tun, {C. J.}",

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T1 - Optical simulation and fabrication of nitride-based LEDs with the inverted pyramid sidewalls

AU - Kuo, C. W.

AU - Lee, Y. C.

AU - Fu, Y. K.

AU - Tsai, C. H.

AU - Wu, M. L.

AU - Chi, G. C.

AU - Kuo, Cheng-Huang

AU - Tun, C. J.

PY - 2009/7/22

Y1 - 2009/7/22

N2 - In this study, the numerical and experimental demonstrations for the enhancement of light-extraction efficiency in nitride-based LEDs with randomly inverted pyramid sidewalls (IPSs) by chemical etching of the chip edge are presented. With 20 mA injection current, it was found that forward voltages were 3.69 and 3.75 V while output powers were 7.07 and 8.95 mW for the conventional LED and inverted pyramid sidewall LED, respectively. The larger LED output power is attributed to the increased light-extraction efficiency by IPSs.

AB - In this study, the numerical and experimental demonstrations for the enhancement of light-extraction efficiency in nitride-based LEDs with randomly inverted pyramid sidewalls (IPSs) by chemical etching of the chip edge are presented. With 20 mA injection current, it was found that forward voltages were 3.69 and 3.75 V while output powers were 7.07 and 8.95 mW for the conventional LED and inverted pyramid sidewall LED, respectively. The larger LED output power is attributed to the increased light-extraction efficiency by IPSs.

KW - Inverted pyramid sidewalls (IPSs)

KW - LED

KW - Simulation

KW - Wet etching

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JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

IS - 4

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ER -

Optical simulation and fabrication of nitride-based LEDs with the inverted pyramid sidewalls

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