Optical simulation and fabrication of near-ultraviolet LEDs on a roughened backside GaN substrate

Yi Keng Fu*, Yu Hsuan Lu, Rong Xuan, Chia Hsin Chao, Yan Kuin Su, Jenn-Fang Chen

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this letter, the numerical and experimental demonstrations for enhancement of light extraction efficiency in near-ultraviolet light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN substrate through a chemical wet-etching process are investigated. It was also found that the increased etching time can increase the height of hexagonal pyramids and decrease the density of hexagonal pyramids. With 20-mA injection current, it was found that forward voltages were 3.13 and 3.16 V while output powers were 13.15 and 27.18 mW for the conventional LED and roughened backside LED, respectively.

原文English
文章編號6122049
頁(從 - 到)488-490
頁數3
期刊IEEE Photonics Technology Letters
24
發行號6
DOIs
出版狀態Published - 7 三月 2012

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