Optical properties of uncapped InN nanodots grown at various temperatures

Ching Yu Chen*, Ling Lee, Shin Kai Tai, Shao Fu Fu, Wen Cheng Ke, Wu-Ching Chou, Wen-Hao Chang, Ming Chih Lee, Wei-Kuo Chen


研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)


Photoluminescence (PL) measurements were employed to investigate the emission properties of uncapped InN nanodot samples grown at temperature from 550 to 725°C. Our results indicate that once the In droplets are formed, the optical properties of InN dots deteriorate markedly. As for those droplet-free samples grown at temperatures ≥600°C, good luminescence properties are obtained. The corresponding 20 K PL peak energy is found to be almost constant at approximately 0.77 eV with a slow increase in its linewidth from 71 to 74 meV. A strong temperature-induced energy blue shift at approximately 20 to 280 K is considered to be partially connected to the bandfilling effects of thermally stimulated surface electrons.

期刊Japanese Journal of Applied Physics
出版狀態Published - 1 3月 2009


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