@inproceedings{c9395bf7fd474fff85f1b936fe7fadab,
title = "Optical properties of InN-based photodetection devices",
abstract = "The InN capped with GaN structures is promising for extended visible and infrared absorption. The low growth temperature of GaN/InN epitaxy was fabricated by a low-pressure metal organic chemical vapor deposition system. The strain effect and mixed InxGa1-xN complex of the GaN/InN layer were investigated via Raman and photoluminescence (PL) measurements. The capping GaN with similar growth temperature of previous InN growth induces the gallium diffusion mechanism to form InxGa1-xN complex. The blue-shift phenomenon of multiple GaN/InN peaks with increasing growth temperature was attributed to residual strain and higher Ga content of InGaN. A ZnO/GaN/InN photodetection device is demonstrated with extended IR response, and the quantum efficiency is 2.28%.",
keywords = "Indium compounds, Infrared, nanostructured materials, photodetection devices",
author = "Hsu, {Lung Hsing} and Chien-Chung Lin and Hwang, {Yi Chia} and Su, {Chen Fung} and Lin, {Shih Yen} and Hao-Chung Kuo",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",
year = "2015",
month = dec,
day = "14",
doi = "10.1109/PVSC.2015.7355923",
language = "English",
series = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",
address = "美國",
}