摘要
We report the observation of green emission centered at 500nm, accompanied with luminescence enhancement and spectral blue shift (∼31meV) in the bandedge emission from a-plane grown gallium nitride (GaN) passivated with gallium hydroxide (GaOOH). From study of the photo-current response and polarization-resolved low-temperature microphotoluminescence (μ-PL) we resolved an evolution of gain competition process between the green and the UV emission bands. By dissolving the oxide we recover the emission characteristics of the as-grown a-GaN. These observations can be ascribed to a formation of compressively-strained a-GaN due to a coherently grown GaOOH atop layer. The latter is responsible for the spectral blue shift and the generation of acceptor like deep-levels causing the green-band transition in the emission and photo-current response. Enhancement of bandedge emission from the oxide covered a-GaN is due to the GaOOH surface passivation effect which was prepared by the photo-enhance wet oxidation method.
| 原文 | English |
|---|---|
| 頁（從 - 到） | 1780-1782 |
| 頁數 | 3 |
| 期刊 | Physica Status Solidi (C) Current Topics in Solid State Physics |
| 卷 | 5 |
| 發行號 | 6 |
| DOIs | |
| 出版狀態 | Published - 13 5月 2008 |
| 事件 | 7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, 美國 持續時間: 16 9月 2007 → 21 9月 2007 |