Optical properties of exciton charge states in InGaAs quantum dots grown by metalorganic chemical vapor deposition

H. S. Chang*, Wen-Hao Chang, W. Y. Chen, T. P. Hsieh, J. I. Chyi, T. M. Hsu

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

The impact of residual impurities on neutral and charged exciton complexes in single InGaAs quantum dots (QDs) grown by metalorganic chemical vapor deposition were investigated. We show that the formation of a charged exciton can be controlled by using resonant excitation to the residual impurity level. This optical excitation scheme is useful for the selective generation only charged excitons in initially neutral QDs without sophisticated sample designs.

原文English
主出版物標題Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
頁面881-882
頁數2
DOIs
出版狀態Published - 1 十二月 2007
事件28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
持續時間: 24 七月 200628 七月 2006

出版系列

名字AIP Conference Proceedings
893
ISSN(列印)0094-243X
ISSN(電子)1551-7616

Conference

Conference28th International Conference on the Physics of Semiconductors, ICPS 2006
國家/地區Austria
城市Vienna
期間24/07/0628/07/06

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