The impact of residual impurities on neutral and charged exciton complexes in single InGaAs quantum dots (QDs) grown by metalorganic chemical vapor deposition were investigated. We show that the formation of a charged exciton can be controlled by using resonant excitation to the residual impurity level. This optical excitation scheme is useful for the selective generation only charged excitons in initially neutral QDs without sophisticated sample designs.
|主出版物標題||Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B|
|出版狀態||Published - 1 十二月 2007|
|事件||28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria|
持續時間: 24 七月 2006 → 28 七月 2006
|名字||AIP Conference Proceedings|
|Conference||28th International Conference on the Physics of Semiconductors, ICPS 2006|
|期間||24/07/06 → 28/07/06|