Optical joint density of states in InGaN/GaN-based multiple-quantum-well light-emitting diodes

Yu Shou Wang, Nai Chuan Chen*, Chun Yi Lu, Jenn-Fang Chen

*此作品的通信作者

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

The optical joint densities of states of three InGaN!GaN-based light-emitting diodes with different emission wavelengths (violet, blue and green) operated at various currents were investigated. The results indicate that the blueshift of the emission with increasing current is related to the variation in optical joint density of states. Thus, the blueshift is ascribed to the screening of the piezoelectric field by carriers. A tail at the low-energy end of the density of states, corresponding to localized states, was found, and the presence of these tails broadens the spectra of the devices.

原文English
頁(從 - 到)4300-4303
頁數4
期刊Physica B: Condensed Matter
406
發行號22
DOIs
出版狀態Published - 15 十一月 2011

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