摘要
The importance of the InP insertion layer grown by gas-source molecular beam epitaxy (GSMBE) in a series of InAsxP1-x/InyGa1-yP separate confinement multiple quantum well (SC-MQW) structures was studied with the thickness of InP insertion layer varied from 0 to 3 ML. SC-MQW samples with and without InP insertion layer were evaluated by cross-sectional TEM analysis (XTEM), X-ray rocking curves and dynamic simulations, and photoluminescence (PL) measurements. Compared with uncompensated InAsP/InP strained MQWs and InAsP/InGaP SC-MQWs without InP insertion layers, much sharper and symmetric satellite peaks in double-crystal X-ray diffraction and excellent photoluminescence were obtained from SC-MQWs with the InP insertion layers.
原文 | English |
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頁(從 - 到) | 332-335 |
頁數 | 4 |
期刊 | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
DOIs | |
出版狀態 | Published - 1 1月 1997 |
事件 | Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA 持續時間: 11 5月 1997 → 15 5月 1997 |