Optical and electronic characteristics of germanium quantum dots formed by selective oxidation of SiGe/Si-on-insulator

Keyphrases

• SiGe 100%
• Insulator 100%
• Optical Characteristics 100%
• Spectroscopic Ellipsometry 100%
• Germanium Quantum Dots 100%
• Selective Oxidation 100%
• Electronic Characteristics 100%
• Dot Size 66%
• Ge Dot 66%
• High-resolution Transmission Electron Microscopy (HRTEM) 33%
• Crystalline Structure 33%
• Blue Shift 33%
• Size Effect 33%
• Room Temperature 33%
• Refractive Index 33%
• Thermal Oxidation 33%
• Shape Structure 33%
• Peak Energy 33%
• Oxidation Time 33%
• Photoemission 33%
• SiO2 Matrix 33%
• SiGe-on-insulator 33%
• Nanocrystal Size 33%
• Cathodoluminescence Spectroscopy 33%
• Structure Transition 33%
• Crystal Morphology 33%
• Oxidation Condition 33%

Material Science

• Quantum Dot 100%
• Oxidation Reaction 100%
• Germanium 100%
• Selective Oxidation 100%
• Refractive Index 50%
• High-Resolution Transmission Electron Microscopy 50%
• Cathodoluminescence Spectroscopy 50%
• Crystal Structure 50%
• Crystallite 50%