Optical and electrical investigations of isoelectronic In-doped GaN films

C. K. Shu*, W. H. Lee, Y. C. Pan, C. C. Chen, H. C. Lin, J. Ou, W. H. Chen, Wei-Kuo Chen, M. C. Lee

*此作品的通信作者

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

The optical and electrical properties of isoelectronic In-doped GaN films grown by metalorganic vapor phase epitaxy (MOVPE) were investigated by X-ray, photoluminescence (PL), Hall and Raman measurements. As a result, adequate In-doping quantity causes not only a reduction of yellow luminescence and unintentional background concentration, but an enhanced mobility and decrease in the widths. The improved crystalline and optical qualities of GaN films may be attributed to the decrease in defects.

原文English
頁(從 - 到)291-293
頁數3
期刊Solid State Communications
114
發行號5
DOIs
出版狀態Published - 11 4月 2000

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