Optical and deep-level spectroscopic study on In 0.38 GaAsN x /GaAs single-quantum-well structures of x≥3% grown by molecular beam epitaxy

T. S. Lay; E. Y. Lin; C. Y. Chang; K. M. Kong; L. P. Chen; T. Y. Chang; J. S. Wang; Kuo-Jui Lin; J. Y. Chi

doi:10.1016/j.jcrysgro.2004.12.100

Optical and deep-level spectroscopic study on In _0.38 GaAsN _x /GaAs single-quantum-well structures of x≥3% grown by molecular beam epitaxy

T. S. Lay^*, E. Y. Lin, C. Y. Chang, K. M. Kong, L. P. Chen, T. Y. Chang, J. S. Wang, Kuo-Jui Lin, J. Y. Chi

^*此作品的通信作者

電子研究所

研究成果: Conference article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The optical and carrier transport properties of In _0.38 GaAsN _x /GaAs single-quantum-well diode laser structures of x ranging from 3% to 3.8% were investigated by temperature-dependent photoluminescence (PL) spectroscopy, photocurrent spectroscopy, differential absorption spectroscopy, and deep-level transient spectroscopy (DLTS). A carrier localized state of ∼12 meV activation energy and of a delocalization temperature at ∼150 K was observed by PL thermal quenching data. We also observed a Gaussian shape absorption edge of increasing absorption strength with the reverse bias in the photocurrent spectra. DLTS data show a hole trap of 0.34 eV activation energy possibly originating from the In _0.38 GaAsN _x layer.

原文	English
頁（從 - 到）	575-579
頁數	5
期刊	Journal of Crystal Growth
卷	278
發行號	1-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.12.100
出版狀態	Published - 1 5月 2005
事件	13th International Conference on Molecular Beam Epitaxy - 持續時間: 22 8月 2004 → 27 8月 2004

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10.1016/j.jcrysgro.2004.12.100

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@article{57b4f58635744049ac25996f42f2194e,

title = "Optical and deep-level spectroscopic study on In 0.38 GaAsN x /GaAs single-quantum-well structures of x≥3% grown by molecular beam epitaxy",

abstract = " The optical and carrier transport properties of In 0.38 GaAsN x /GaAs single-quantum-well diode laser structures of x ranging from 3% to 3.8% were investigated by temperature-dependent photoluminescence (PL) spectroscopy, photocurrent spectroscopy, differential absorption spectroscopy, and deep-level transient spectroscopy (DLTS). A carrier localized state of ∼12 meV activation energy and of a delocalization temperature at ∼150 K was observed by PL thermal quenching data. We also observed a Gaussian shape absorption edge of increasing absorption strength with the reverse bias in the photocurrent spectra. DLTS data show a hole trap of 0.34 eV activation energy possibly originating from the In 0.38 GaAsN x layer.",

keywords = "A1. Characterization, A1. Low dimensional structures, A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting III-V materials",

author = "Lay, {T. S.} and Lin, {E. Y.} and Chang, {C. Y.} and Kong, {K. M.} and Chen, {L. P.} and Chang, {T. Y.} and Wang, {J. S.} and Kuo-Jui Lin and Chi, {J. Y.}",

year = "2005",

month = may,

day = "1",

doi = "10.1016/j.jcrysgro.2004.12.100",

language = "English",

volume = "278",

pages = "575--579",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

note = "13th International Conference on Molecular Beam Epitaxy ; Conference date: 22-08-2004 Through 27-08-2004",

}

TY - JOUR

T1 - Optical and deep-level spectroscopic study on In 0.38 GaAsN x /GaAs single-quantum-well structures of x≥3% grown by molecular beam epitaxy

AU - Lay, T. S.

AU - Lin, E. Y.

AU - Chang, C. Y.

AU - Kong, K. M.

AU - Chen, L. P.

AU - Chang, T. Y.

AU - Wang, J. S.

AU - Lin, Kuo-Jui

AU - Chi, J. Y.

PY - 2005/5/1

Y1 - 2005/5/1

N2 - The optical and carrier transport properties of In 0.38 GaAsN x /GaAs single-quantum-well diode laser structures of x ranging from 3% to 3.8% were investigated by temperature-dependent photoluminescence (PL) spectroscopy, photocurrent spectroscopy, differential absorption spectroscopy, and deep-level transient spectroscopy (DLTS). A carrier localized state of ∼12 meV activation energy and of a delocalization temperature at ∼150 K was observed by PL thermal quenching data. We also observed a Gaussian shape absorption edge of increasing absorption strength with the reverse bias in the photocurrent spectra. DLTS data show a hole trap of 0.34 eV activation energy possibly originating from the In 0.38 GaAsN x layer.

AB - The optical and carrier transport properties of In 0.38 GaAsN x /GaAs single-quantum-well diode laser structures of x ranging from 3% to 3.8% were investigated by temperature-dependent photoluminescence (PL) spectroscopy, photocurrent spectroscopy, differential absorption spectroscopy, and deep-level transient spectroscopy (DLTS). A carrier localized state of ∼12 meV activation energy and of a delocalization temperature at ∼150 K was observed by PL thermal quenching data. We also observed a Gaussian shape absorption edge of increasing absorption strength with the reverse bias in the photocurrent spectra. DLTS data show a hole trap of 0.34 eV activation energy possibly originating from the In 0.38 GaAsN x layer.

KW - A1. Characterization

KW - A1. Low dimensional structures

KW - A3. Molecular beam epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=18444400274&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.12.100

DO - 10.1016/j.jcrysgro.2004.12.100

M3 - Conference article

AN - SCOPUS:18444400274

SN - 0022-0248

VL - 278

SP - 575

EP - 579

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - 13th International Conference on Molecular Beam Epitaxy

Y2 - 22 August 2004 through 27 August 2004

ER -

Optical and deep-level spectroscopic study on In 0.38 GaAsN x /GaAs single-quantum-well structures of x≥3% grown by molecular beam epitaxy

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Optical and deep-level spectroscopic study on In _0.38 GaAsN _x /GaAs single-quantum-well structures of x≥3% grown by molecular beam epitaxy