One selector-one resistor (1S1R) crossbar array for high-density flexible memory applications

Jiun Jia Huang*, Yi Ming Tseng, Wun Cheng Luo, Chung Wei Hsu, Tuo-Hung Hou

*此作品的通信作者

    研究成果: Conference contribution同行評審

    94 引文 斯高帕斯(Scopus)

    摘要

    Lack of a suitable selection device to suppress sneak current has impeded the development of 4F 2 crossbar memory array utilizing stable and scalable bipolar resistive-switching. We report a high-performance nonlinear bipolar selector realized by a simple Ni/TiO 2 /Ni MIM structure with a high current density of 10 5 A/cm 2 , and a Ni/TiO 2 /Ni/HfO 2 /Pt vertically stacked 1S1R cell capable of gigabit memory implementation. Furthermore, the demonstration of 1S1R array fabricated completely at room temperature on a plastic substrate highlights the promise of future extremely low-cost flexible nonvolatile memory.

    原文English
    主出版物標題2011 International Electron Devices Meeting, IEDM 2011
    DOIs
    出版狀態Published - 1 12月 2011
    事件2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
    持續時間: 5 12月 20117 12月 2011

    出版系列

    名字Technical Digest - International Electron Devices Meeting, IEDM
    ISSN(列印)0163-1918

    Conference

    Conference2011 IEEE International Electron Devices Meeting, IEDM 2011
    國家/地區United States
    城市Washington, DC
    期間5/12/117/12/11

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