One selector-one resistor (1S1R) crossbar array for high-density flexible memory applications

Jiun Jia Huang; Yi Ming Tseng; Wun Cheng Luo; Chung Wei Hsu; Tuo-Hung Hou

doi:10.1109/IEDM.2011.6131653

One selector-one resistor (1S1R) crossbar array for high-density flexible memory applications

Jiun Jia Huang^*, Yi Ming Tseng, Wun Cheng Luo, Chung Wei Hsu, Tuo-Hung Hou

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

94 引文斯高帕斯（Scopus）

摘要

Lack of a suitable selection device to suppress sneak current has impeded the development of 4F ² crossbar memory array utilizing stable and scalable bipolar resistive-switching. We report a high-performance nonlinear bipolar selector realized by a simple Ni/TiO ₂ /Ni MIM structure with a high current density of 10 ⁵ A/cm ² , and a Ni/TiO ₂ /Ni/HfO ₂ /Pt vertically stacked 1S1R cell capable of gigabit memory implementation. Furthermore, the demonstration of 1S1R array fabricated completely at room temperature on a plastic substrate highlights the promise of future extremely low-cost flexible nonvolatile memory.

原文	English
主出版物標題	2011 International Electron Devices Meeting, IEDM 2011
DOIs	https://doi.org/10.1109/IEDM.2011.6131653
出版狀態	Published - 1 12月 2011
事件	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States 持續時間: 5 12月 2011 → 7 12月 2011

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
ISSN（列印）	0163-1918

Conference

Conference	2011 IEEE International Electron Devices Meeting, IEDM 2011
國家/地區	United States
城市	Washington, DC
期間	5/12/11 → 7/12/11

存取文件

10.1109/IEDM.2011.6131653

其它文件與鏈接

Link to publication in Scopus

引用此

@inproceedings{dcc7d872dd7c4c1e93fd4ec16e366b71,

title = "One selector-one resistor (1S1R) crossbar array for high-density flexible memory applications",

abstract = " Lack of a suitable selection device to suppress sneak current has impeded the development of 4F 2 crossbar memory array utilizing stable and scalable bipolar resistive-switching. We report a high-performance nonlinear bipolar selector realized by a simple Ni/TiO 2 /Ni MIM structure with a high current density of 10 5 A/cm 2 , and a Ni/TiO 2 /Ni/HfO 2 /Pt vertically stacked 1S1R cell capable of gigabit memory implementation. Furthermore, the demonstration of 1S1R array fabricated completely at room temperature on a plastic substrate highlights the promise of future extremely low-cost flexible nonvolatile memory.",

author = "Huang, {Jiun Jia} and Tseng, {Yi Ming} and Luo, {Wun Cheng} and Hsu, {Chung Wei} and Tuo-Hung Hou",

year = "2011",

month = dec,

day = "1",

doi = "10.1109/IEDM.2011.6131653",

language = "English",

isbn = "9781457705052",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2011 International Electron Devices Meeting, IEDM 2011",

note = "null ; Conference date: 05-12-2011 Through 07-12-2011",

}

Huang, JJ, Tseng, YM, Luo, WC, Hsu, CW & Hou, T-H 2011, One selector-one resistor (1S1R) crossbar array for high-density flexible memory applications. 於 2011 International Electron Devices Meeting, IEDM 2011., 6131653, Technical Digest - International Electron Devices Meeting, IEDM, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 5/12/11. https://doi.org/10.1109/IEDM.2011.6131653

TY - GEN

T1 - One selector-one resistor (1S1R) crossbar array for high-density flexible memory applications

AU - Huang, Jiun Jia

AU - Tseng, Yi Ming

AU - Luo, Wun Cheng

AU - Hsu, Chung Wei

AU - Hou, Tuo-Hung

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Lack of a suitable selection device to suppress sneak current has impeded the development of 4F 2 crossbar memory array utilizing stable and scalable bipolar resistive-switching. We report a high-performance nonlinear bipolar selector realized by a simple Ni/TiO 2 /Ni MIM structure with a high current density of 10 5 A/cm 2 , and a Ni/TiO 2 /Ni/HfO 2 /Pt vertically stacked 1S1R cell capable of gigabit memory implementation. Furthermore, the demonstration of 1S1R array fabricated completely at room temperature on a plastic substrate highlights the promise of future extremely low-cost flexible nonvolatile memory.

AB - Lack of a suitable selection device to suppress sneak current has impeded the development of 4F 2 crossbar memory array utilizing stable and scalable bipolar resistive-switching. We report a high-performance nonlinear bipolar selector realized by a simple Ni/TiO 2 /Ni MIM structure with a high current density of 10 5 A/cm 2 , and a Ni/TiO 2 /Ni/HfO 2 /Pt vertically stacked 1S1R cell capable of gigabit memory implementation. Furthermore, the demonstration of 1S1R array fabricated completely at room temperature on a plastic substrate highlights the promise of future extremely low-cost flexible nonvolatile memory.

UR - http://www.scopus.com/inward/record.url?scp=84863052217&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2011.6131653

DO - 10.1109/IEDM.2011.6131653

M3 - Conference contribution

AN - SCOPUS:84863052217

SN - 9781457705052

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2011 International Electron Devices Meeting, IEDM 2011

Y2 - 5 December 2011 through 7 December 2011

ER -

One selector-one resistor (1S1R) crossbar array for high-density flexible memory applications

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Conference

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