On the Temperature Dependence of Majority Carrier Transport in Heavily Arsenic-Doped Polycrystalline Silicon Thin Films

John D. Cressler, Wei Hwang, Tze Chiang Chen

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

An experimental and theoretical investigation of the temperature dependence of the dc conductivity in heavily ar-senic-doped polycrystalline silicon thin films is presented. Measured results indicate that the carrier trapping model which is traditionally used to describe polysilicon transport fails in the heavy doping regime. After consideration of alternative models, the electrical nature of the grain boundary is found to be best described as a conduction process with two different activation energies. Reasonable agreement with data is obtained when the grain and grain boundary conductivities are combined using a model of the film microstructure. Nonuniform grain size and distributions are considered.

原文English
頁(從 - 到)794-804
頁數11
期刊Journal of the Electrochemical Society
136
發行號3
DOIs
出版狀態Published - 1 1月 1989

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