On the potential of CRS, 1D1R, and 1S1R crossbar RRAM for storage-class memory

Chun Li Lo; Mei Chin Chen; Jiun Jia Huang; Tuo-Hung Hou

doi:10.1109/VLSI-TSA.2013.6545588

On the potential of CRS, 1D1R, and 1S1R crossbar RRAM for storage-class memory

Chun Li Lo, Mei Chin Chen, Jiun Jia Huang, Tuo-Hung Hou

研究成果: Conference contribution › 同行評審

7 引文斯高帕斯（Scopus）

原文	English
主出版物標題	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
頁面	1-2
頁數	2
DOIs	https://doi.org/10.1109/VLSI-TSA.2013.6545588
出版狀態	Published - 22 4月 2013
事件	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 - Hsinchu, Taiwan 持續時間: 22 4月 2013 → 24 4月 2013

出版系列

名字	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Conference

Conference	2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
國家/地區	Taiwan
城市	Hsinchu
期間	22/04/13 → 24/04/13

存取文件

10.1109/VLSI-TSA.2013.6545588

其它文件與鏈接

Link to publication in Scopus

引用此

Lo, C. L., Chen, M. C., Huang, J. J., & Hou, T-H. (2013). On the potential of CRS, 1D1R, and 1S1R crossbar RRAM for storage-class memory. 於 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 (頁 1-2). [6545588] (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013). https://doi.org/10.1109/VLSI-TSA.2013.6545588

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title = "On the potential of CRS, 1D1R, and 1S1R crossbar RRAM for storage-class memory",

author = "Lo, {Chun Li} and Chen, {Mei Chin} and Huang, {Jiun Jia} and Tuo-Hung Hou",

year = "2013",

month = apr,

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doi = "10.1109/VLSI-TSA.2013.6545588",

language = "English",

isbn = "9781467330817",

series = "2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013",

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Lo, CL, Chen, MC, Huang, JJ & Hou, T-H 2013, On the potential of CRS, 1D1R, and 1S1R crossbar RRAM for storage-class memory. 於 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013., 6545588, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013, 頁 1-2, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013, Hsinchu, Taiwan, 22/04/13. https://doi.org/10.1109/VLSI-TSA.2013.6545588

On the potential of CRS, 1D1R, and 1S1R crossbar RRAM for storage-class memory. / Lo, Chun Li; Chen, Mei Chin; Huang, Jiun Jia 等.

2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. 2013. p. 1-2 6545588 (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013).

研究成果: Conference contribution › 同行評審

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AU - Chen, Mei Chin

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AU - Hou, Tuo-Hung

PY - 2013/4/22

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T3 - 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

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EP - 2

BT - 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Y2 - 22 April 2013 through 24 April 2013

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